NGB8206AN PDF and Equivalents Search

 

NGB8206AN Specs and Replacement

Type Designator: NGB8206AN

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 150 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 390 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 15 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.15 V @25℃

tr ⓘ - Rise Time, typ: 6000 nS

Coesⓘ - Output Capacitance, typ: 80 pF

Package: D2PAK

 NGB8206AN Substitution

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NGB8206AN datasheet

 ..1. Size:123K  1
ngb8206n ngb8206an.pdf pdf_icon

NGB8206AN

NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2... See More ⇒

 6.1. Size:123K  onsemi
ngb8206a.pdf pdf_icon

NGB8206AN

NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2... See More ⇒

 8.1. Size:130K  1
ngb8207n ngb8207bn.pdf pdf_icon

NGB8206AN

NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2... See More ⇒

 8.2. Size:123K  1
ngb8202n ngb8202an.pdf pdf_icon

NGB8206AN

NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2... See More ⇒

Specs: SGF23N60UF, SGP10N60RUFD, SGS5N150UF, NGB15N41CL, NGB18N40CLB, NGB8202AN, NGB8202N, NGB8204N, RJP63F3DPP-M0, NGB8206N, NGB8207AN, NGB8207N, NGD15N41CL, NGD18N40CLB, NGD8201A, NGD8201N, NGD8205N

Keywords - NGB8206AN transistor spec

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