All IGBT. IXBH2N250 Datasheet

 

IXBH2N250 Datasheet and Replacement


   Type Designator: IXBH2N250
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 32 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 5 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.15 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 180 nS
   Coesⓘ - Output Capacitance, typ: 8.7 pF
   Package: TO247
      - IGBT Cross-Reference

 

IXBH2N250 Datasheet (PDF)

 ..1. Size:180K  ixys
 ixbh2n250.pdf pdf_icon

IXBH2N250

Advance Technical InformationHigh Voltage, High GainVCES = 2500VIXBH2N250BIMOSFETTMIXBT2N250IC110 = 2AVCE(sat) 3.50VMonolithic Bipolar MOSTransistor TO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 2500 VVCGR TJ = 25C to 150C, RGE = 1M 2500 VGC (TAB)CVGES Continuous 20 VEVGEM Transient 30 VIC

 9.1. Size:60K  ixys
 ixbh20n160.pdf pdf_icon

IXBH2N250

High Voltage BIMOSFETTM IXBH 20N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 20N160 IC25 = 20 AMOS Transistor VCE(sat) = 4.7 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features20N140 20N160 International standard packageVCES TJ = 25C to 150C 140

 9.2. Size:288K  ixys
 ixbh20n360hv.pdf pdf_icon

IXBH2N250

Advance Technical InformationHigh Voltage, High GainVCES = 3600VIXBT20N360HVBIMOSFETTM MonolithicIXBH20N360HVIC110 = 20ABipolar MOS TransistorVCE(sat) 3.4VTO-268HV (IXBT)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 3600 V E C (Tab)VCGR TJ = 25C to 150C, RGE = 1M 3600 VVGES Continuous 20 VTO-247HV (IXBH)VGEM

 9.3. Size:69K  ixys
 ixbh28n170a ixbt28n170a.pdf pdf_icon

IXBH2N250

ADVANCE TECHNICAL INFORMATIONVCES = 1700 VHigh Voltage, High GainIXBH 28N170ABIMOSFETTM Monolithic IC25 = 30 AIXBT 28N170ABipolar MOS TransistorVCE(sat) = 6.0 Vtfi = 50 nsSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25

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Datasheet: IXBF9N160G , IXBH10N170 , IXBH12N300 , IXBH16N170 , IXBH16N170A , IXBH20N300 , IXBH24N170 , IXBH28N170A , FGL60N100BNTD , IXBH32N300 , IXBH40N160 , IXBH42N170 , IXBH42N170A , IXBH5N160G , IXBH6N170 , IXBH9N160G , IXBK55N300 .

History: CM2400HC-34H | IRGI4090 | SIW100N65G2P2D | DIM500GDM33-TS | FB30R06W1E3 | CM400C1Y-24S | FD400R33KF2C

Keywords - IXBH2N250 transistor datasheet

 IXBH2N250 cross reference
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