IXBK75N170A Specs and Replacement

Type Designator: IXBK75N170A

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1040 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 110 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.95 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Coesⓘ - Output Capacitance, typ: 450 pF

Package: TO264

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IXBK75N170A datasheet

 ..1. Size:192K  ixys
 ixbk75n170a.pdf pdf_icon

IXBK75N170A

Advance Technical Information BiMOSFETTM Monolithic VCES = 1700V IXBK75N170A Bipolar MOS Transistor IC90 = 65A IXBX75N170A VCE(sat) 6.00V tfi(typ) = 60ns TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G C VGES Continuous 20 V (TAB) E VGEM Transient 30 V IC25 TC = 25 C... See More ⇒

 ..2. Size:194K  ixys
 ixbk75n170a ixbx75n170a.pdf pdf_icon

IXBK75N170A

Advance Technical Information BiMOSFETTM Monolithic VCES = 1700V IXBK75N170A Bipolar MOS Transistor IC90 = 65A IXBX75N170A VCE(sat) 6.00V tfi(typ) = 60ns TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G C VGES Continuous 20 V (TAB) E VGEM Transient 30 V IC25 TC = 25 C... See More ⇒

 4.1. Size:179K  ixys
 ixbk75n170 ixbx75n170.pdf pdf_icon

IXBK75N170A

Preliminary Technical Information BiMOSFETTM Monolithic VCES = 1700V IXBK75N170 Bipolar MOS Transistor IC110 = 75A IXBX75N170 VCE(sat) 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G C VGES Continuous 20 V Tab E VGEM Transient 30 V IC25 TC = 25 C (Chip Capabilitt... See More ⇒

 4.2. Size:177K  ixys
 ixbk75n170.pdf pdf_icon

IXBK75N170A

Preliminary Technical Information BiMOSFETTM Monolithic VCES = 1700V IXBK75N170 Bipolar MOS Transistor IC110 = 75A IXBX75N170 VCE(sat) 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G C VGES Continuous 20 V Tab E VGEM Transient 30 V IC25 TC = 25 C (Chip Capabilitt... See More ⇒

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Specs: IXBH42N170, IXBH42N170A, IXBH5N160G, IXBH6N170, IXBH9N160G, IXBK55N300, IXBK64N250, IXBK75N170, TGD30N40P, IXBL64N250, IXBN42N170A, IXBN75N170, IXBN75N170A, IXBP5N160G, IXBR42N170, IXBT10N170, IXBT12N300

Keywords - IXBK75N170A transistor spec

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