All IGBT. IXBK75N170A Datasheet

 

IXBK75N170A IGBT. Datasheet pdf. Equivalent


   Type Designator: IXBK75N170A
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1040 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 110 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.95 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 450 pF
   Qgⓘ - Total Gate Charge, typ: 358 nC
   Package: TO264

 IXBK75N170A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXBK75N170A Datasheet (PDF)

 ..1. Size:192K  ixys
 ixbk75n170a.pdf

IXBK75N170A IXBK75N170A

Advance Technical InformationBiMOSFETTM Monolithic VCES = 1700VIXBK75N170ABipolar MOS Transistor IC90 = 65AIXBX75N170AVCE(sat) 6.00Vtfi(typ) = 60nsTO-264 (IXBK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGCVGES Continuous 20 V (TAB)EVGEM Transient 30 VIC25 TC = 25C

 ..2. Size:194K  ixys
 ixbk75n170a ixbx75n170a.pdf

IXBK75N170A IXBK75N170A

Advance Technical InformationBiMOSFETTM Monolithic VCES = 1700VIXBK75N170ABipolar MOS Transistor IC90 = 65AIXBX75N170AVCE(sat) 6.00Vtfi(typ) = 60nsTO-264 (IXBK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGCVGES Continuous 20 V (TAB)EVGEM Transient 30 VIC25 TC = 25C

 4.1. Size:179K  ixys
 ixbk75n170 ixbx75n170.pdf

IXBK75N170A IXBK75N170A

Preliminary Technical InformationBiMOSFETTM Monolithic VCES = 1700VIXBK75N170Bipolar MOS Transistor IC110 = 75AIXBX75N170VCE(sat) 3.1VTO-264 (IXBK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGCVGES Continuous 20 V TabEVGEM Transient 30 VIC25 TC = 25C (Chip Capabilitt

 4.2. Size:177K  ixys
 ixbk75n170.pdf

IXBK75N170A IXBK75N170A

Preliminary Technical InformationBiMOSFETTM Monolithic VCES = 1700VIXBK75N170Bipolar MOS Transistor IC110 = 75AIXBX75N170VCE(sat) 3.1VTO-264 (IXBK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGCVGES Continuous 20 V TabEVGEM Transient 30 VIC25 TC = 25C (Chip Capabilitt

Datasheet: IXBH42N170 , IXBH42N170A , IXBH5N160G , IXBH6N170 , IXBH9N160G , IXBK55N300 , IXBK64N250 , IXBK75N170 , RJP6065DPM , IXBL64N250 , IXBN42N170A , IXBN75N170 , IXBN75N170A , IXBP5N160G , IXBR42N170 , IXBT10N170 , IXBT12N300 .

 

 
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