All IGBT. 1MB08D-120 Datasheet

 

1MB08D-120 IGBT. Datasheet pdf. Equivalent


   Type Designator: 1MB08D-120
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 115 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 13 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 600 nS
   Coesⓘ - Output Capacitance, typ: 160 pF
   Package: TO3P

 1MB08D-120 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

1MB08D-120 Datasheet (PDF)

 ..1. Size:257K  fuji
 1mb08-120 1mb08d-120.pdf

1MB08D-120 1MB08D-120

1MB08-120,1MB08D-120,Molded IGBT1200V / 8AMolded PackageFeatures Small molded package Low power loss Soft switching with low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Comprehensive line-upApplications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supplyEquivalent Circuit Schematic

 9.1. Size:193K  fuji
 1mb08-120.pdf

1MB08D-120 1MB08D-120

Fuji Discrete Package IGBT n Outline Drawingnn Featuresn Square RBSOA Low Saturation Voltage Less Total Power Dissipation Minimized Internal Stray Inductancen Applicationsn High Power Switching A.C. Motor Controls D.C. Motor Controls Uninterruptible Power Supplyn Maximum Ratings and Characteristics n Equivalent Circuitn n Absolute Maxim

Datasheet: TGL75N120FDR , TGPF15N60FDR , TGPF20N60FDR , TGH80N65F2D2 , 1MB03D-120 , 1MB05-120 , 1MB05D-120 , 1MB08-120 , RJP30E2DPP-M0 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 , 1MB20D-060 , 1MB30-060 , 1MBC03-120 , 1MBC05-060 .

 

 
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