All IGBT. IXDH35N60B Datasheet

 

IXDH35N60B Datasheet and Replacement


   Type Designator: IXDH35N60B
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 45 nS
   Coesⓘ - Output Capacitance, typ: 150 pF
   Package: TO247
      - IGBT Cross-Reference

 

IXDH35N60B Datasheet (PDF)

 ..1. Size:325K  ixys
 ixdh35n60b.pdf pdf_icon

IXDH35N60B

IXDP 35N60 B VCES = 600 VIGBTIXDH 35N60 B IC25 = 60 Awith optional DiodeIXDH 35N60 BD1 VCE(sat) typ = 2.1 VHigh Speed,Low Saturation VoltageC CTO-247 AD IXDH ...G GGE ECC (TAB)E IXDH 35N60 B IXDH 35N60 BD1 IXDP 35N60 BSymbol Conditions Maximum Ratings TO-220 AB IXDP ...VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 20 kW 600 VG CEVG

 0.1. Size:325K  ixys
 ixdh35n60bd1.pdf pdf_icon

IXDH35N60B

IXDP 35N60 B VCES = 600 VIGBTIXDH 35N60 B IC25 = 60 Awith optional DiodeIXDH 35N60 BD1 VCE(sat) typ = 2.1 VHigh Speed,Low Saturation VoltageC CTO-247 AD IXDH ...G GGE ECC (TAB)E IXDH 35N60 B IXDH 35N60 BD1 IXDP 35N60 BSymbol Conditions Maximum Ratings TO-220 AB IXDP ...VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 20 kW 600 VG CEVG

 9.1. Size:83K  ixys
 ixdh30n120.pdf pdf_icon

IXDH35N60B

IXDH 30N120IXDH 30N120 D1VCES = 1200 VHigh Voltage IGBTIC25 = 60 Awith optional DiodeVCE(sat) typ = 2.4 VShort Circuit SOA CapabilityC CSquare RBSOA TO-247 AD (IXDH)G GGCC (TAB)E EEIXDH 30N120 IXDH 30N120 D1 G = Gate, E = EmitterC = Collector , TAB = CollectorSymbol Conditions Maximum Ratings Features NPT IGBT technologyVCES TJ = 25C to 150C 1200 V

 9.2. Size:83K  ixys
 ixdh30n120d1.pdf pdf_icon

IXDH35N60B

IXDH 30N120IXDH 30N120 D1VCES = 1200 VHigh Voltage IGBTIC25 = 60 Awith optional DiodeVCE(sat) typ = 2.4 VShort Circuit SOA CapabilityC CSquare RBSOA TO-247 AD (IXDH)G GGCC (TAB)E EEIXDH 30N120 IXDH 30N120 D1 G = Gate, E = EmitterC = Collector , TAB = CollectorSymbol Conditions Maximum Ratings Features NPT IGBT technologyVCES TJ = 25C to 150C 1200 V

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Datasheet: IXBT42N170 , IXBT42N170A , IXBT6N170 , IXBX25N250 , IXBX55N300 , IXBX64N250 , IXBX75N170 , IXBX75N170A , GT50JR22 , IXDH35N60BD1 , IXDP20N60B , IXDP20N60BD1 , IXDP35N60B , IXDR30N120 , IXDR30N120D1 , IXDR35N60BD1 , IXEH25N120 .

History: SKW30N60 | SGW10N60A | IGB30N60H3 | IXGH15N120CD1 | MGP7N60ED | IXEH25N120D1 | FGH40N60SFDTU-F085

Keywords - IXDH35N60B transistor datasheet

 IXDH35N60B cross reference
 IXDH35N60B equivalent finder
 IXDH35N60B lookup
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 IXDH35N60B replacement

 

 
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