All IGBT. IXDP35N60B Datasheet

 

IXDP35N60B Datasheet and Replacement


   Type Designator: IXDP35N60B
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 45 nS
   Coesⓘ - Output Capacitance, typ: 150 pF
   Package: TO220
 

 IXDP35N60B substitution

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IXDP35N60B Datasheet (PDF)

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IXDP35N60B

IXDP 35N60 B VCES = 600 VIGBTIXDH 35N60 B IC25 = 60 Awith optional DiodeIXDH 35N60 BD1 VCE(sat) typ = 2.1 VHigh Speed,Low Saturation VoltageC CTO-247 AD IXDH ...G GGE ECC (TAB)E IXDH 35N60 B IXDH 35N60 BD1 IXDP 35N60 BSymbol Conditions Maximum Ratings TO-220 AB IXDP ...VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 20 kW 600 VG CEVG

Datasheet: IXBX55N300 , IXBX64N250 , IXBX75N170 , IXBX75N170A , IXDH35N60B , IXDH35N60BD1 , IXDP20N60B , IXDP20N60BD1 , RJP30H2A , IXDR30N120 , IXDR30N120D1 , IXDR35N60BD1 , IXEH25N120 , IXEH25N120D1 , IXEH40N120 , IXEH40N120D1 , IXEL40N400 .

History: 2MBI100U4A-120 | IXGC16N60B2D1 | IXGA16N60B2 | VS-GT105NA120UX | MG150Q2YS40 | AUIRGB4062D1 | YGW25N120F1A1

Keywords - IXDP35N60B transistor datasheet

 IXDP35N60B cross reference
 IXDP35N60B equivalent finder
 IXDP35N60B lookup
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