IXDR30N120D1 IGBT. Datasheet pdf. Equivalent
Type Designator: IXDR30N120D1
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 70 nS
Coesⓘ - Output Capacitance, typ: 250 pF
Qgⓘ - Total Gate Charge, typ: 120 nC
Package: ISOPLUS247
IXDR30N120D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXDR30N120D1 Datasheet (PDF)
ixdr30n120d1.pdf
IXDR 30N120 D1IXDR 30N120VCES = 1200 VHigh Voltage IGBTIC25 = 50 Awith optional DiodeVCE(sat) typ = 2.4 VISOPLUSTM package(Electrically Isolated Back Side)C CISOPLUS 247TMShort Circuit SOA Capability E153432Square RBSOAG GGCEE EIsolated Backside*IXDR 30N120 IXDR 30N120 D1G = Gate C = Collector E = EmitterSymbol Conditions Maximum Ratings Features
ixdr30n120.pdf
IXDR 30N120 D1IXDR 30N120VCES = 1200 VHigh Voltage IGBTIC25 = 50 Awith optional DiodeVCE(sat) typ = 2.4 VISOPLUSTM package(Electrically Isolated Back Side)C CISOPLUS 247TMShort Circuit SOA Capability E153432Square RBSOAG GGCEE EIsolated Backside*IXDR 30N120 IXDR 30N120 D1G = Gate C = Collector E = EmitterSymbol Conditions Maximum Ratings Features
ixdr35n60bd1.pdf
IXDR 35N60 BD1VCES = 600 VIGBTIC25 = 38 Awith optional DiodeVCE(sat) typ= 2.2 VHigh Speed,Low Saturation VoltageCISOPLUS 247TMGGCEIsolated back surfaceEG = Gate, E = EmitterC = Collector , TAB = CollectorSymbol Conditions Maximum Ratings FeaturesNPT IGBT technologyVCES TJ = 25C to 150C 600 Vlow switching lossesVCGR TJ = 25C to 150C;
Datasheet: IXBX75N170 , IXBX75N170A , IXDH35N60B , IXDH35N60BD1 , IXDP20N60B , IXDP20N60BD1 , IXDP35N60B , IXDR30N120 , SGT50T65FD1PT , IXDR35N60BD1 , IXEH25N120 , IXEH25N120D1 , IXEH40N120 , IXEH40N120D1 , IXEL40N400 , IXEN60N120 , IXEN60N120D1 .
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