IXEH25N120 Specs and Replacement

Type Designator: IXEH25N120

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 200 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 36 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.6 V @25℃

tr ⓘ - Rise Time, typ: 105 nS

Package: TO247

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IXEH25N120 datasheet

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 ixeh25n120 ixeh25n120d1.pdf pdf_icon

IXEH25N120

IXEH 25N120 IXEH 25N120D1 IC25 = 36 A NPT3 IGBT VCES = 1200 V VCE(sat) typ = 2.6 V C C TO-247 AD G G G E E C C (TAB) E IXEH 25N120 IXEH 25N120D1 Features IGBT NPT3 IGBT Symbol Conditions Maximum Ratings - positive temperature coefficient of saturation voltage for easy paralleling VCES TVJ = 25 C to 150 C 1200 V - fast switching - short tail current for optimized ... See More ⇒

Specs: IXDH35N60B, IXDH35N60BD1, IXDP20N60B, IXDP20N60BD1, IXDP35N60B, IXDR30N120, IXDR30N120D1, IXDR35N60BD1, SGT50T65FD1PT, IXEH25N120D1, IXEH40N120, IXEH40N120D1, IXEL40N400, IXEN60N120, IXEN60N120D1, IXER20N120, IXER20N120D1

Keywords - IXEH25N120 transistor spec

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