All IGBT. IXEH25N120 Datasheet

 

IXEH25N120 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXEH25N120
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 36 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 105 nS
   Qgⓘ - Total Gate Charge, typ: 100 nC
   Package: TO247

 IXEH25N120 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXEH25N120 Datasheet (PDF)

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 ixeh25n120 ixeh25n120d1.pdf

IXEH25N120 IXEH25N120

IXEH 25N120IXEH 25N120D1IC25 = 36 ANPT3 IGBTVCES = 1200 VVCE(sat) typ = 2.6 VC CTO-247 ADG GGE ECC (TAB)EIXEH 25N120 IXEH 25N120D1Features IGBT NPT3 IGBTSymbol Conditions Maximum Ratings - positive temperature coefficient ofsaturation voltage for easy parallelingVCES TVJ = 25C to 150C 1200 V- fast switching- short tail current for optimized

Datasheet: IXDH35N60B , IXDH35N60BD1 , IXDP20N60B , IXDP20N60BD1 , IXDP35N60B , IXDR30N120 , IXDR30N120D1 , IXDR35N60BD1 , RJP30E2DPP-M0 , IXEH25N120D1 , IXEH40N120 , IXEH40N120D1 , IXEL40N400 , IXEN60N120 , IXEN60N120D1 , IXER20N120 , IXER20N120D1 .

 

 
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