IXER20N120 Specs and Replacement

Type Designator: IXER20N120

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 130 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 29 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃

|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V

tr ⓘ - Rise Time, typ: 105 nS

Qg ⓘ - Total Gate Charge, typ: 100 nC

Package: ISOPLUS247

 IXER20N120 Substitution

- IGBTⓘ Cross-Reference Search

 

IXER20N120 datasheet

 ..1. Size:342K  ixys
 ixer20n120 ixer20n120d1.pdf pdf_icon

IXER20N120

IXER 20N120 IXER 20N120D1 IC25 = 36 A NPT3 IGBT VCES = 1200 V in ISOPLUS247 VCE(sat)typ = 2.4 V C C ISOPLUS247 G G G C Isolated Backside E E E IXER 20N120 IXER 20N120D1 G = Gate C = Collector E = Emitter Features IGBT NPT3 IGBT Symbol Conditions Maximum Ratings - low saturation voltage VCES TVJ = 25 C to 150 C 1200 V - positive temperature coefficient for... See More ⇒

Specs: IXDR35N60BD1, IXEH25N120, IXEH25N120D1, IXEH40N120, IXEH40N120D1, IXEL40N400, IXEN60N120, IXEN60N120D1, BT40T60ANF, IXER20N120D1, IXER35N120D1, IXER60N120, IXGA12N120A2, IXGA12N120A3, IXGA12N60B, IXGA14N120B, IXGA15N120B2

Keywords - IXER20N120 transistor spec

 IXER20N120 cross reference
 IXER20N120 equivalent finder
 IXER20N120 lookup
 IXER20N120 substitution
 IXER20N120 replacement