All IGBT. IXER20N120 Datasheet

 

IXER20N120 Datasheet and Replacement


   Type Designator: IXER20N120
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 130 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 29 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 105 nS
   Package: ISOPLUS247
 

 IXER20N120 substitution

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IXER20N120 Datasheet (PDF)

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 ixer20n120 ixer20n120d1.pdf pdf_icon

IXER20N120

IXER 20N120IXER 20N120D1IC25 = 36 ANPT3 IGBTVCES = 1200 Vin ISOPLUS247VCE(sat)typ = 2.4 VC CISOPLUS247G GGC Isolated BacksideEE EIXER 20N120 IXER 20N120D1 G = Gate C = Collector E = EmitterFeaturesIGBT NPT3 IGBTSymbol Conditions Maximum Ratings - low saturation voltage VCES TVJ = 25C to 150C 1200 V - positive temperature coefficient for

Datasheet: IXDR35N60BD1 , IXEH25N120 , IXEH25N120D1 , IXEH40N120 , IXEH40N120D1 , IXEL40N400 , IXEN60N120 , IXEN60N120D1 , IRG7IC28U , IXER20N120D1 , IXER35N120D1 , IXER60N120 , IXGA12N120A2 , IXGA12N120A3 , IXGA12N60B , IXGA14N120B , IXGA15N120B2 .

History: FPF2C8P2NL07A | 2MBI100NC-120 | FGH40N60SFDTU-F085 | MIXA450PF1200TSF | MBN600GR12A | NGTB20N120IHRWG | IHW25N120E1

Keywords - IXER20N120 transistor datasheet

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