IXGA16N60C2D1 Specs and Replacement

Type Designator: IXGA16N60C2D1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 150 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3(max) V @25℃

tr ⓘ - Rise Time, typ: 17 nS

Coesⓘ - Output Capacitance, typ: 72 pF

Package: TO263

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IXGA16N60C2D1 datasheet

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IXGA16N60C2D1

HiPerFASTTM IGBTs VCES = 600V IXGA16N60C2D1 C2-Class High Speed IC110 = 16A IXGP16N60C2D1 w/ Diode VCE(sat) 3.0V IXGH16N60C2D1 tfi(typ) = 33ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G C C ... See More ⇒

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IXGA16N60C2D1

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IXGA16N60C2D1

HiPerFASTTM IGBTs VCES = 600V IXGA16N60B2D1 B2-Class High Speed IC110 = 16A IXGP16N60B2D1 w/ Diode VCE(sat) 2.3V IXGH16N60B2D1 tfi(typ) = 70ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G C C (... See More ⇒

 5.2. Size:221K  ixys
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IXGA16N60C2D1

HiPerFASTTM IGBTs VCES = 600V IXGA16N60B2 B2-Class High Speed IC110 = 16A IXGP16N60B2 VCE(sat) 2.3V tfi(typ) = 70ns TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G E VCES TJ = 25 C to 150 C 600 V C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V TO-220AB (IXGP) VGEM Transient 30 V IC25 TC = 25 C40 A IC110 TC = 110 ... See More ⇒

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Specs: IXGA12N120A2, IXGA12N120A3, IXGA12N60B, IXGA14N120B, IXGA15N120B2, IXGA16N60B2, IXGA16N60B2D1, IXGA16N60C2, MBQ50T65FDSC, IXGA20N100A3, IXGA20N120, IXGA20N120A3, IXGA20N120B3, IXGA24N120C3, IXGA24N60C, IXGA30N120B3, IXGA30N60C3

Keywords - IXGA16N60C2D1 transistor spec

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