All IGBT. IXGA30N60C3D4 Datasheet

 

IXGA30N60C3D4 Datasheet and Replacement


   Type Designator: IXGA30N60C3D4
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 220 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 26 nS
   Coesⓘ - Output Capacitance, typ: 78 pF
   Qg ⓘ - Total Gate Charge, typ: 38 nC
   Package: TO263
 

 IXGA30N60C3D4 substitution

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IXGA30N60C3D4 Datasheet (PDF)

 ..1. Size:287K  ixys
 ixga30n60c3d4.pdf pdf_icon

IXGA30N60C3D4

GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3D4 w/ Diode IC110 = 30A IXGP30N60C3D4 VCE(sat) 3.0V tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G E VCES TC = 25C to 150C 600 V C (Tab) VCGR TJ = 25C to 150C, RGE = 1M 600 V TO-220AB (IXGP) VGES Continuous 20 V

 3.1. Size:269K  ixys
 ixga30n60c3.pdf pdf_icon

IXGA30N60C3D4

GenX3TM 600V VCES = 600V IXGA30N60C3 IGBTs IC110 = 30A IXGP30N60C3 VCE(sat) 3.0V IXGH30N60C3 tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M 600 V TO-220AB (IXGP) VGES Continuous 20 V

 3.2. Size:278K  ixys
 ixga30n60c3c1.pdf pdf_icon

IXGA30N60C3D4

GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3C1 w/ SiC Anti-Parallel IC110 = 30A IXGP30N60C3C1 Diode VCE(sat) 3.0V IXGH30N60C3C1 tfi(typ) = 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TC = 25C to 150C 600 V VCGR TJ = 25C to 150C, RG

 7.1. Size:209K  ixys
 ixga30n120b3.pdf pdf_icon

IXGA30N60C3D4

VCES = 1200VGenX3TM 1200V IXGA30N120B3IC110 = 30AIGBTs IXGP30N120B3VCE(sat) 3.5VIXGH30N120B3tfi(typ) = 204nsHigh-Speed Low-Vsat PTIGBTs 3-20 kHz SwitchingTO-263 (IXGA)GESymbol Test Conditions Maximum Ratings C (Tab)VCES TC = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VTO-220 (IXGP)VGES Continuous 20 VVGEM Tra

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Datasheet: IXGA20N120 , IXGA20N120A3 , IXGA20N120B3 , IXGA24N120C3 , IXGA24N60C , IXGA30N120B3 , IXGA30N60C3 , IXGA30N60C3C1 , SGT60N60FD1P7 , IXGA36N60A3 , IXGA42N30C3 , IXGA48N60A3 , IXGA48N60B3 , IXGA48N60C3 , IXGA4N100 , IXGA50N60B4 , IXGA50N60C4 .

History: BLG40T120FUH-F

Keywords - IXGA30N60C3D4 transistor datasheet

 IXGA30N60C3D4 cross reference
 IXGA30N60C3D4 equivalent finder
 IXGA30N60C3D4 lookup
 IXGA30N60C3D4 substitution
 IXGA30N60C3D4 replacement

 

 
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