IXGA50N60B4 Specs and Replacement

Type Designator: IXGA50N60B4

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃

tr ⓘ - Rise Time, typ: 68 nS

Coesⓘ - Output Capacitance, typ: 105 pF

Package: TO263

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IXGA50N60B4 datasheet

 ..1. Size:218K  ixys
 ixga50n60b4.pdf pdf_icon

IXGA50N60B4

VCES = 600V High-Gain IGBTs IXGA50N60B4 IC110 = 50A IXGP50N60B4 VCE(sat) 1.8V IXGH50N60B4 Low-Vsat PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V C C (Tab) E IC25 TC = 25 C 1... See More ⇒

 5.1. Size:216K  ixys
 ixga50n60c4.pdf pdf_icon

IXGA50N60B4

VCES = 600V High-Gain IGBTs IXGA50N60C4 IC110 = 46A IXGP50N60C4 VCE(sat) 2.3V IXGH50N60C4 High-Speed PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V C C (Tab) E IC25 TC = 25 C... See More ⇒

Specs: IXGA30N60C3C1, IXGA30N60C3D4, IXGA36N60A3, IXGA42N30C3, IXGA48N60A3, IXGA48N60B3, IXGA48N60C3, IXGA4N100, JT075N065WED, IXGA50N60C4, IXGA7N60BD1, IXGA7N60CD1, IXGB200N60B3, IXGB75N60BD1, IXGE200N60B, IXGF20N250, IXGF20N300

Keywords - IXGA50N60B4 transistor spec

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