IXGH120N30C3 Specs and Replacement

Type Designator: IXGH120N30C3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 540 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 300 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃

tr ⓘ - Rise Time, typ: 37 nS

Coesⓘ - Output Capacitance, typ: 715 pF

Package: TO247

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IXGH120N30C3 datasheet

 ..1. Size:115K  ixys
ixgh120n30c3.pdf pdf_icon

IXGH120N30C3

Preliminary Technical Information IXGH120N30C3 VCES = 300V GenX3TM 300V IGBT IC110 = 120A VCE(sat) 2.1V High speed PT IGBTs for tfi(typ) = 86ns 50-150kHz switching TO-247 AD Symbol Test Conditions Maximum Ratings (IXGH) VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C, RGE = 1M 300 V G VGES Continuous 20 V C (TAB) E VGEM Transient 30 ... See More ⇒

 4.1. Size:160K  ixys
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IXGH120N30C3

TM VCES = 300V GenX3 300V IGBT IXGH120N30B3 IC110 = 120A VCE(sat) 1.7V Medium speed low Vsat PT IGBTs for 10-50 kHz switching Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C, RGE = 1M 300 V VGES Continuous 20 V VGEM Transient 30 V G TAB C IC25 TC = 25 C (limited by leads) 75 A E IC110... See More ⇒

 8.1. Size:119K  ixys
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IXGH120N30C3

VCES IC25 VCE(sat) Low VCE(sat) IGBT with Diode High Speed IGBT with Diode IXGH 12N100U1 1000 V 24 A 3.5 V Combi Pack IXGH 12N100AU1 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V VGES Continuous 20 V VGEM Transient 30 V C (TAB) G C IC25 TC = 25 C24 A E IC90 TC = 90 C12 A ICM ... See More ⇒

 8.2. Size:119K  ixys
ixgh12n100au1.pdf pdf_icon

IXGH120N30C3

VCES IC25 VCE(sat) Low VCE(sat) IGBT with Diode High Speed IGBT with Diode IXGH 12N100U1 1000 V 24 A 3.5 V Combi Pack IXGH 12N100AU1 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V VGES Continuous 20 V VGEM Transient 30 V C (TAB) G C IC25 TC = 25 C24 A E IC90 TC = 90 C12 A ICM ... See More ⇒

Specs: IXGF32N170, IXGF36N300, IXGH100N30B3, IXGH100N30C3, IXGH10N170, IXGH10N170A, IXGH10N300, IXGH120N30B3, TGPF30N43P, IXGH12N120A3, IXGH15N120B2D1, IXGH16N170, IXGH16N170A, IXGH16N170AH1, IXGH16N60B2D1, IXGH16N60C2D1, IXGH20N100A3

Keywords - IXGH120N30C3 transistor spec

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