IXGH16N60B2D1 Specs and Replacement

Type Designator: IXGH16N60B2D1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 150 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3(max) V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Coesⓘ - Output Capacitance, typ: 70 pF

Package: TO247

 IXGH16N60B2D1 Substitution

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IXGH16N60B2D1 datasheet

 ..1. Size:214K  ixys
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IXGH16N60B2D1

HiPerFASTTM IGBTs VCES = 600V IXGA16N60B2D1 B2-Class High Speed IC110 = 16A IXGP16N60B2D1 w/ Diode VCE(sat) 2.3V IXGH16N60B2D1 tfi(typ) = 70ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G C C (... See More ⇒

 5.1. Size:216K  ixys
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IXGH16N60B2D1

HiPerFASTTM IGBTs VCES = 600V IXGA16N60C2D1 C2-Class High Speed IC110 = 16A IXGP16N60C2D1 w/ Diode VCE(sat) 3.0V IXGH16N60C2D1 tfi(typ) = 33ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G C C ... See More ⇒

 7.1. Size:193K  ixys
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IXGH16N60B2D1

IXGH 16N170 VCES = 1700 V High Voltage IXGT 16N170 IC25 = 32 A IGBT VCE(sat) = 3.5 V TO-268 (D3-Pak) (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1700 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V E C (TAB) VGES Continuous 20 V VGEM Transient 30 V TO-247 (IXGH) IC25 TC = 25 C32 A IC90 TC = 90 C16 A ICM TC = 25 C, 1 ms 80 A C (TAB) SSOA VG... See More ⇒

 7.2. Size:165K  ixys
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IXGH16N60B2D1

IXGH 16N170A VCES = 1700 V High Voltage IXGT 16N170A IC25 = 16 A IGBT IXGH 16N170AH1 VCE(sat) = 5.0 V IXGT 16N170AH1 tfi(typ) = 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings H1 VCES TJ = 25 C to 150 C 1700 V TO-268 (IXGT) VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V VGES Continuous 20 V VGEM Transient 30 V G E IC25 TC = 25 C16 A C (TAB) IC90 T... See More ⇒

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Specs: IXGH10N300, IXGH120N30B3, IXGH120N30C3, IXGH12N120A3, IXGH15N120B2D1, IXGH16N170, IXGH16N170A, IXGH16N170AH1, MBQ40T65FDSC, IXGH16N60C2D1, IXGH20N100A3, IXGH20N120, IXGH20N120A3, IXGH20N120B, IXGH20N140C3H1, IXGH22N170, IXGH24N120C3

Keywords - IXGH16N60B2D1 transistor spec

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