All IGBT. IXGH28N140B3H1 Datasheet

 

IXGH28N140B3H1 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXGH28N140B3H1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 163 pF
   Qgⓘ - Total Gate Charge, typ: 88 nC
   Package: TO247

 IXGH28N140B3H1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGH28N140B3H1 Datasheet (PDF)

 ..1. Size:198K  ixys
 ixgh28n140b3h1.pdf

IXGH28N140B3H1 IXGH28N140B3H1

GenX3TM 1400V VCES = 1400VIXGH28N140B3H1IC110 = 28AIGBTs w/ DiodeIXGX28N140B3H1 VCE(sat) 3.60V IXGK28N140B3H1Avalanche RatedTO-247 (IXGH)GCTabESymbol Test Conditions Maximum RatingsPLUS247 (IXGX)VCES TJ = 25C to 150C 1400 VVCGR TJ = 25C to 150C, RGE = 1M 1400 VVGES Continuous 20 VVGEM Transient 30 VGCIC25 TC = 25C

 6.1. Size:575K  ixys
 ixgh28n120b ixgt28n120b.pdf

IXGH28N140B3H1 IXGH28N140B3H1

IXGH 28N120B VCES = 1200 VHigh Voltage IGBTIXGT 28N120B IC25 = 50 AVCE(sat) = 3.5 Vtfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C50 ATO-247 AD (IXGH)IC110 TC = 110C28 AICM TC = 25C, 1 ms 150 A

 6.2. Size:195K  ixys
 ixgh28n120bd1.pdf

IXGH28N140B3H1 IXGH28N140B3H1

High Voltage IGBT VCES = 1200VIXGH28N120BD1w/ Diode IC25 = 50AIXGT28N120BD1VCE(sat) 3.5Vtfi(typ) = 170nsTO-247AD (IXGH)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 1200 VCE (TAB)VCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VTO-268 (IXGT)VGEM Transient 30 VIC25 TC = 25C ( Chip Capability ) 50 AI

 6.3. Size:572K  ixys
 ixgh28n120b.pdf

IXGH28N140B3H1 IXGH28N140B3H1

IXGH 28N120B VCES = 1200 VHigh Voltage IGBTIXGT 28N120B IC25 = 50 AVCE(sat) = 3.5 Vtfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C50 ATO-247 AD (IXGH)IC110 TC = 110C28 AICM TC = 25C, 1 ms 150 A

Datasheet: IXGH24N170A , IXGH24N170AH1 , IXGH24N60C4 , IXGH24N60C4D1 , IXGH25N160 , IXGH25N250 , IXGH28N120B , IXGH28N120BD1 , IRG4PC40W , IXGH28N60B3D1 , IXGH28N60BD1 , IXGH2N250 , IXGH30N120B3 , IXGH30N120B3D1 , IXGH30N120C3H1 , IXGH30N60B2 , IXGH30N60B2D1 .

 

 
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