IXGH28N140B3H1 Specs and Replacement

Type Designator: IXGH28N140B3H1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃

tr ⓘ - Rise Time, typ: 36 nS

Coesⓘ - Output Capacitance, typ: 163 pF

Package: TO247

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IXGH28N140B3H1 datasheet

 ..1. Size:198K  ixys
 ixgh28n140b3h1.pdf pdf_icon

IXGH28N140B3H1

GenX3TM 1400V VCES = 1400V IXGH28N140B3H1 IC110 = 28A IGBTs w/ Diode IXGX28N140B3H1 VCE(sat) 3.60V IXGK28N140B3H1 Avalanche Rated TO-247 (IXGH) G C Tab E Symbol Test Conditions Maximum Ratings PLUS247 (IXGX) VCES TJ = 25 C to 150 C 1400 V VCGR TJ = 25 C to 150 C, RGE = 1M 1400 V VGES Continuous 20 V VGEM Transient 30 V G C IC25 TC = 25 C... See More ⇒

 6.1. Size:575K  ixys
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IXGH28N140B3H1

IXGH 28N120B VCES = 1200 V High Voltage IGBT IXGT 28N120B IC25 = 50 A VCE(sat) = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C50 A TO-247 AD (IXGH) IC110 TC = 110 C28 A ICM TC = 25 C, 1 ms 150 A ... See More ⇒

 6.2. Size:195K  ixys
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IXGH28N140B3H1

High Voltage IGBT VCES = 1200V IXGH28N120BD1 w/ Diode IC25 = 50A IXGT28N120BD1 VCE(sat) 3.5V tfi(typ) = 170ns TO-247AD (IXGH) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 1200 V C E (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V TO-268 (IXGT) VGEM Transient 30 V IC25 TC = 25 C ( Chip Capability ) 50 A I... See More ⇒

 6.3. Size:572K  ixys
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IXGH28N140B3H1

IXGH 28N120B VCES = 1200 V High Voltage IGBT IXGT 28N120B IC25 = 50 A VCE(sat) = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C50 A TO-247 AD (IXGH) IC110 TC = 110 C28 A ICM TC = 25 C, 1 ms 150 A ... See More ⇒

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Specs: IXGH24N170A, IXGH24N170AH1, IXGH24N60C4, IXGH24N60C4D1, IXGH25N160, IXGH25N250, IXGH28N120B, IXGH28N120BD1, IRG7S313U, IXGH28N60B3D1, IXGH28N60BD1, IXGH2N250, IXGH30N120B3, IXGH30N120B3D1, IXGH30N120C3H1, IXGH30N60B2, IXGH30N60B2D1

Keywords - IXGH28N140B3H1 transistor spec

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