All IGBT. IXGH30N60C2D1 Datasheet

 

IXGH30N60C2D1 Datasheet and Replacement


   Type Designator: IXGH30N60C2D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 190 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 70 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 140 pF
   Qg ⓘ - Total Gate Charge, typ: 70 nC
   Package: TO247
 

 IXGH30N60C2D1 substitution

   - IGBT ⓘ Cross-Reference Search

 

IXGH30N60C2D1 Datasheet (PDF)

 ..1. Size:164K  ixys
 ixgh30n60c2d1 ixgt30n60c2d1.pdf pdf_icon

IXGH30N60C2D1

VCES = 600 VHiPerFASTTM IGBT IXGH 30N60C2D1IC25 = 70 AIXGT 30N60C2D1with DiodeVCE(sat) = 2.7 VC2-Class High Speed IGBTstfi typ = 32 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C (limited by leads) 70 AIC11

 ..2. Size:159K  ixys
 ixgh30n60c2d1.pdf pdf_icon

IXGH30N60C2D1

VCES = 600 VHiPerFASTTM IGBT IXGH 30N60C2D1IC25 = 70 AIXGT 30N60C2D1with DiodeVCE(sat) = 2.7 VC2-Class High Speed IGBTstfi typ = 32 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C (limited by leads) 70 AIC11

 3.1. Size:583K  ixys
 ixgh30n60c2 ixgt30n60c2.pdf pdf_icon

IXGH30N60C2D1

VCES = 600 VIXGH 30N60C2HiPerFASTTM IGBTIC25 = 70 AIXGT 30N60C2VCE(sat) = 2.7 VC2-Class High Speed IGBTstfi typ = 32 nsTO-268 (IXGT)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C (limited by leads) 70 ATO-247 (IXGH)IC110 TC =

 3.2. Size:580K  ixys
 ixgh30n60c2.pdf pdf_icon

IXGH30N60C2D1

VCES = 600 VIXGH 30N60C2HiPerFASTTM IGBTIC25 = 70 AIXGT 30N60C2VCE(sat) = 2.7 VC2-Class High Speed IGBTstfi typ = 32 nsTO-268 (IXGT)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C (limited by leads) 70 ATO-247 (IXGH)IC110 TC =

SHOW MORE

Datasheet: IXGH2N250 , IXGH30N120B3 , IXGH30N120B3D1 , IXGH30N120C3H1 , IXGH30N60B2 , IXGH30N60B2D1 , IXGH30N60B4 , IXGH30N60C2 , FGH40N60SFD , IXGH30N60C3 , IXGH30N60C3C1 , IXGH30N60C3D1 , IXGH32N100A3 , IXGH32N120A3 , IXGH32N170 , IXGH32N170A , IXGH32N90B2 .

History: STGW30V60DF | CRG15T60A03L | HYG30P120H1K1

Keywords - IXGH30N60C2D1 transistor datasheet

 IXGH30N60C2D1 cross reference
 IXGH30N60C2D1 equivalent finder
 IXGH30N60C2D1 lookup
 IXGH30N60C2D1 substitution
 IXGH30N60C2D1 replacement

 

 
Back to Top

 


 
.