All IGBT. IXGH32N170 Datasheet

 

IXGH32N170 Datasheet and Replacement


   Type Designator: IXGH32N170
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 350 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 38 nS
   Coesⓘ - Output Capacitance, typ: 165 pF
   Package: TO247
      - IGBT Cross-Reference

 

IXGH32N170 Datasheet (PDF)

 ..1. Size:573K  ixys
 ixgh32n170.pdf pdf_icon

IXGH32N170

High Voltage IXGH 32N170 VCES = 1700 VIXGT 32N170 IC25 = 75 AIGBTVCE(sat) = 3.3 Vtfi(typ) = 250 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C75 ATO-247 AD (IXGH)IC90 TC = 90C32 AICM TC

 ..2. Size:577K  ixys
 ixgh32n170 ixgt32n170.pdf pdf_icon

IXGH32N170

High Voltage IXGH 32N170 VCES = 1700 VIXGT 32N170 IC25 = 75 AIGBTVCE(sat) = 3.3 Vtfi(typ) = 250 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C75 ATO-247 AD (IXGH)IC90 TC = 90C32 AICM TC

 0.1. Size:572K  ixys
 ixgh32n170a ixgt32n170a.pdf pdf_icon

IXGH32N170

IXGH 32N170AVCES = 1700 VHigh VoltageIXGT 32N170AIC25 = 32 AIGBTVCE(sat) = 5.0 Vtfi(typ) = 50 nsSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C32 ATO-247 AD (IXGH)IC90 TC = 90C21 AICM TC = 25C, 1 ms 110 A

 0.2. Size:569K  ixys
 ixgh32n170a.pdf pdf_icon

IXGH32N170

IXGH 32N170AVCES = 1700 VHigh VoltageIXGT 32N170AIC25 = 32 AIGBTVCE(sat) = 5.0 Vtfi(typ) = 50 nsSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C32 ATO-247 AD (IXGH)IC90 TC = 90C21 AICM TC = 25C, 1 ms 110 A

SHOW MORE

Datasheet: IXGH30N60B4 , IXGH30N60C2 , IXGH30N60C2D1 , IXGH30N60C3 , IXGH30N60C3C1 , IXGH30N60C3D1 , IXGH32N100A3 , IXGH32N120A3 , SGT40N60NPFDPN , IXGH32N170A , IXGH32N90B2 , IXGH32N90B2D1 , IXGH34N60B2 , IXGH35N120B , IXGH35N120C , IXGH36N60A3 , IXGH36N60A3D4 .

History: IXBH5N160G | HGTP10N120BN | MMG75SR120UZA | F3L75R07W2E3_B11 | STGB10M65DF2 | CT20ASL-8 | IGB30N60T

Keywords - IXGH32N170 transistor datasheet

 IXGH32N170 cross reference
 IXGH32N170 equivalent finder
 IXGH32N170 lookup
 IXGH32N170 substitution
 IXGH32N170 replacement

 

 
Back to Top

 


 
.