IXGH34N60B2 IGBT. Datasheet pdf. Equivalent

Advance Technical DataVCES = 600 VIXGH 34N60B2HiPerFASTTM IGBTIC25 = 70 AVCE(sat)

IXGH 32N170AVCES = 1700 VHigh VoltageIXGT 32N170AIC25 = 32 AIGBTVCE(sat) = 5.0 Vtfi(typ) = 50 nsSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C32 ATO-247 AD (IXGH)IC90 TC = 90C21 AICM TC = 25C, 1 ms 110 A

Advance Technical DataVCES = 600 VIXGH 30N60B2HiPerFASTTM IGBTIC25 = 70 AIXGT 30N60B2VCE(sat)

Advance Technical DataVCES = 600 VHiPerFASTTM IGBT IXGH 30N60B2D1IC25 = 70 AIXGT 30N60B2D1VCE(sat)

Ultra-Low VCE(sat) IGBT IXGH 38N60 VCES = 600 VIC25 = 76 AVCE(sat) = 1.8 VSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C76 AG = Gate, C = Collector,IC90 TC = 90C38 AE = Emitter, TAB = CollectorICM TC = 25C, 1 ms 152 ASSOA

VCES = 600 VIXGH 30N60C2HiPerFASTTM IGBTIC25 = 70 AIXGT 30N60C2VCE(sat) = 2.7 VC2-Class High Speed IGBTstfi typ = 32 nsTO-268 (IXGT)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C (limited by leads) 70 ATO-247 (IXGH)IC110 TC =

Advance Technical InformationIXGH 35N120C VCES = 1200 VIGBTIXGT 35N120C IC25 = 70 AVCE(sat) = 4.0 VLightspeed Seriestfi(typ) = 115 nsSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VGEVGES Continuous 20 V(TAB)VGEM Transient 30 VIC25 TC = 25C70 ATO-247 AD (IXGH)IC90 TC = 90C3

HiPerFASTTM IGBT IXGH 30N60BU1 VCES = 600 VIXGT 30N60BU1 IC25 = 60 Awith DiodeVCE(sat) = 1.8 VCombi Packtfi = 100 nsTO-268(IXGT)GSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 150C 600 VC (TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VTO-247 ADVGEM Transient 30 VIC25 TC = 25C60 AC (TAB)IC110 TC = 110C30 AGICM

High Voltage IXGH 32N170 VCES = 1700 VIXGT 32N170 IC25 = 75 AIGBTVCE(sat) = 3.3 Vtfi(typ) = 250 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C75 ATO-247 AD (IXGH)IC90 TC = 90C32 AICM TC

Advance Technical InformationIXGH 35N120B VCES = 1200 VHiPerFASTTM IGBTIXGT 35N120B IC2 = 70 AVCE(sat) = 3.3 Vtfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VGEVGES Continuous 20 VC (TAB)VGEM Transient 30 VIC25 TC = 25C70 ATO-247 AD (IXGH)IC90 TC = 90C35 AI

Advance Technical InformationVCES = 900 VIXGH 32N90B2D1HiPerFASTTM IGBTIC25 = 64 AIXGT 32N90B2D1with Fast DiodeVCE(sat) = 2.7 Vtfi typ = 150 nsB2-ClassHigh Speed IGBTs withUltrafast DiodeSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 MW 900 VC (TAB)VGES Continuous 20 VGCVGEM Transient

VCES = 600 VHiPerFASTTM IGBT IXGH 30N60C2D1IC25 = 70 AIXGT 30N60C2D1with DiodeVCE(sat) = 2.7 VC2-Class High Speed IGBTstfi typ = 32 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C (limited by leads) 70 AIC11

GenX3TM 600V IGBTsVCES = 600VIXGH30N60C3D1w/ DiodeIC110 = 30AIXGT30N60C3D1VCE(sat) 3.0Vtfi(typ) = 47nsHigh-Speed PT IGBTs for40-100 kHz SwitchingTO-268 (IXGT)Symbol Test Conditions Maximum RatingsGVCES TC = 25C to 150C 600 VEVCGR TJ = 25C to 150C, RGE = 1M 600 VC (Tab)VGES Continuous 20 VVGEM Transient 30 VTO-247 (IXG

IXGH 32N60AU1IXGH 32N60AU1SVCES = 600 VIC25 = 60 AHiPerFASTTM IGBTwith Diode VCE(sat) = 2.9VCombi Packtfi = 125 nsTO-247 SMD(32N60AU1S)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGC (TAB)EVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VTO-247 ADVGEM Transient 30 VIC25 TC = 25C60 AIC90 TC = 90C32 AC (TAB)

Preliminary Technical InformationVCES = 1200VGenX3TM 1200V IGBT IXGH30N120C3H1IC100 = 24A VCE(sat) 4.2V High speed PT IGBTs fortfi(typ) = 42ns10-50kHz SwitchingSymbol Test Conditions Maximum RatingsTO-247ADVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VGIC25 TC = 25C 4

IXGH 32N60AIXGH 32N60ASVCES = 600 VIC25 = 60 AHiPerFASTTM IGBTVCE(sat) = 2.9 Vtfi = 125 nsTO-247 SMD(32N60AS)Symbol Test Conditions Maximum RatingsC (TAB)VCES TJ = 25C to 150C 600 V GEVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VTO-247 ADVGEM Transient 30 VIC25 TC = 25C60 AIC90 TC = 90C32 AC (TAB)GICM TC = 25C, 1 ms 120

VCES = 1200VGenX3TM 1200V IXGA30N120B3IC110 = 30AIGBTs IXGP30N120B3VCE(sat) 3.5VIXGH30N120B3tfi(typ) = 204nsHigh-Speed Low-Vsat PTIGBTs 3-20 kHz SwitchingTO-263 (IXGA)GESymbol Test Conditions Maximum Ratings C (Tab)VCES TC = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VTO-220 (IXGP)VGES Continuous 20 VVGEM Tra

GenX3TM 1200V VCES = 1200VIXGH32N120A3IGBTs IC110 = 32AIXGT32N120A3VCE(sat) 2.35VUltra-Low Vsat PT IGBTs forup to 3 kHz SwitchingTO-268 (IXGT)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 1200 VEVCGR TJ = 25C to 150C, RGE = 1M 1200 VC (Tab)VGES Continuous 20 VTO-247 (IXGH)VGEM Transient 30 VIC25 TC = 25C 75

IXGH 32N170AVCES = 1700 VHigh VoltageIXGT 32N170AIC25 = 32 AIGBTVCE(sat) = 5.0 Vtfi(typ) = 50 nsSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C32 ATO-247 AD (IXGH)IC90 TC = 90C21 AICM TC = 25C, 1 ms 110 A

IXGH30N30 VCES = 300 VHiPerFASTTM IGBTIC25 = 60 AVCE(sat) = 1.6 Vtfi = 180 nsPreliminary dataTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 300 VVCGR TJ = 25C to 150C; RGE = 1 M 300 VC (TAB)GVGES Continuous 20 VCEVGEM Transient 30 VG = Gate, C = Collector,E = Emitter, TAB = CollectorIC25 TC = 25C 60 AIC90 TC = 90C 30

VCES = 600 VHiPerFASTTM IGBT IXGH 30N60C2D1IC25 = 70 AIXGT 30N60C2D1with DiodeVCE(sat) = 2.7 VC2-Class High Speed IGBTstfi typ = 32 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C (limited by leads) 70 AIC11

VCES = 600 VIXGH 30N60C2HiPerFASTTM IGBTIC25 = 70 AIXGT 30N60C2VCE(sat) = 2.7 VC2-Class High Speed IGBTstfi typ = 32 nsTO-268 (IXGT)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C (limited by leads) 70 ATO-247 (IXGH)IC110 TC =

VCES = 1200VGenX3TM 1200V IGBT IXGH30N120B3D1IC110 = 30A IXGT30N120B3D1VCE(sat) 3.5Vtfi(typ) = 204nsHigh speed Low Vsat PTIGBTs 3-20 kHz switchingSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VGIC110 TC = 110C30

IXGH 32N60C VCES = 600 VHiPerFASTTM IGBTIXGT 32N60C IC25 = 60 ALightspeedTM SeriesVCE(sat)typ = 2.1 Vtfi typ = 55 nsTO-268Symbol Test Conditions Maximum Ratings (IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C60 ATO-247 AD (IXGH)IC110 TC = 110C32 AICM TC =

HiPerFASTTM IGBT IXGH39N60B VCES = 600 VIXGH39N60BD1 IC25 = 76 AIXGT39N60B VCE(sat) = 1.7 VIXGT39N60BD1 tfi = 200 nsPreliminary data(D1)TO-268Symbol Test Conditions Maximum Ratings (IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VTO-247 AD (IXGH)IC25 TC = 25C76 AIC90 TC =

Advance Technical InformationIXGH 32N90B2 VCES = 900 VHiPerFASTTM IGBTIXGT 32N90B2 IC25 = 64 AB2-Class High Speed IGBTsVCE(sat) = 2.7 Vtfi typ = 150 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGVGEM Transient 30 V CEIC25 TC = 25C (limited by leads)

Advance Technical DataVCES = 600 VIXGH 30N60B2HiPerFASTTM IGBTIC25 = 70 AIXGT 30N60B2VCE(sat)

VCES = 600VGenX3TM 600V IGBTIXGH36N60B3D4IC110 = 36AVCE(sat) 1.8VMedium speed low Vsat PTIGBT for 5-40kHz switchingTO-247 AD (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 V GTABCVGEM Transient 30 VEIC110 TC = 110C 36 AIF110 TC = 110C 10 A

Advance Technical Information IXGH32N100A3 VCES = 1000V GenX3TM 1000V IGBT IXGT32N100A3 IC25 = 75A VCE(sat) 2.2V Ultra-low Vsat PT IGBTs for up to 4 kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25C to 150C 1000 V G C (TAB) VCGR TJ = 25C to 150C, RGE = 1M 1000 V C E VGES Continuous 20 V TO-268 (

GenX3TM 600V VCES = 600V IXGA30N60C3 IGBTs IC110 = 30A IXGP30N60C3 VCE(sat) 3.0V IXGH30N60C3 tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M 600 V TO-220AB (IXGP) VGES Continuous 20 V

IXGH 32N60CD1 VCES = 600 VHiPerFASTTM IGBTIXGT 32N60CD1 IC25 = 60 Awith DiodeVCE(SAT)typ = 2.1 Vtfi(typ) = 55 nsLight Speed SeriesTO-247 AD (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGVGES Continuous 20 VC (TAB)CVGEM Transient 30 V EIC25 TC = 25C60 AIC90 TC = 90C32 ATO-268 (D

Advance Technical InformationGenX3TM 600V IGBT VCES = 600VIXGH36N60B3IC110 = 36A VCE(sat) 1.8V Medium-Speed Low-Vsat PT IGBTfor 5 - 40kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VC TabEVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C 92 A

Preliminary Technical InformationGenX3TM 600V IGBT VCES = 600VIXGH36N60B3C1w/ SiC Anti-Parallel IC110 = 36ADiode VCE(sat) 1.8Vtfi(typ) = 100nsMedium Speed Low Vsat PTIGBT for 5 - 40kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VG (TAB)VCGR TJ = 25C to 150C, RGE = 1M 600 V CEVGES Continuous 20

Preliminary Technical InformationIXGA36N60A3 VCES = 600VGenX3TM 600V IGBTIXGP36N60A3IC110 = 36AIXGH36N60A3VCE(sat) 1.4VUltra Low Vsat PT IGBT forup to 5kHz switchingTO-263 (IXGA)GSymbol Test Conditions Maximum RatingsE (TAB)VCES TC = 25C to 150C 600 VTO-220 (IXGP)VCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGE

Advance Technical InformationIXGH 35N120B VCES = 1200 VHiPerFASTTM IGBTIXGT 35N120B IC2 = 70 AVCE(sat) = 3.3 Vtfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VGEVGES Continuous 20 VC (TAB)VGEM Transient 30 VIC25 TC = 25C70 ATO-247 AD (IXGH)IC90 TC = 90C35 AI

IXGH 30N60BD1HiPerFASTTM IGBT VCES = 600 VIXGT 30N60BD1IC25 = 60 Awith DiodeVCE(sat) = 1.8 Vtfi(typ) = 100 nsSymbol Test Conditions Maximum RatingsTO-268(IXGT)VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 MW 600 VEVGES Continuous 20 VC (TAB)VGEM Transient 30 VIC25 TC = 25C60 ATO-247 AD(IXGH)IC90 TC = 90C30 AICM TC = 25C, 1

IXGH 32N60BHiPerFASTTM IGBT VCES = 600 VIXGT 32N60BIC25 = 60 AIXGH 32N60BD1VCE(sat) = 2.3 VIXGT 32N60BD1tfi(typ) = 85 ns(D1)Symbol Test Conditions Maximum RatingsTO-268(IXGT)GVCES TJ = 25C to 150C 600 VECVCGR TJ = 25C to 150C; RGE = 1 M 600 V(TAB)VGES Continuous 20 VTO-247 ADVGEM Transient 30 V(IXGH)IC25 TC = 25C60 AIC90 TC = 90C3

IXGH30N60B VCES = 600 VHiPerFASTTM IGBTIXGT30N60B IC25 = 60 AVCE(sat) = 1.8 Vtfi = 100 nsSymbol Test Conditions Maximum Ratings TO-247 AD(IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VC (TAB)GCVGEM Transient 30 VEIC25 TC = 25C60 AIC110 TC = 110C30 ATO-268 (D3)ICM TC = 25C, 1 ms 120 A(IXGT)SSOA

Preliminary Technical InformationVCES = 600VGenX3TM 600V IGBTIXGH36N60A3D4with Diode IC110 = 36AVCE(sat) 1.4VUltra Low Vsat PT IGBT forup to 5kHz switchingTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)EIC1

GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3C1 w/ SiC Anti-Parallel IC110 = 30A IXGP30N60C3C1 Diode VCE(sat) 3.0V IXGH30N60C3C1 tfi(typ) = 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TC = 25C to 150C 600 V VCGR TJ = 25C to 150C, RG

High Voltage IXGH 32N170 VCES = 1700 VIXGT 32N170 IC25 = 75 AIGBTVCE(sat) = 3.3 Vtfi(typ) = 250 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C75 ATO-247 AD (IXGH)IC90 TC = 90C32 AICM TC

Ultra-Low VCE(sat) IXGH 31N60D1 VCES = 600 VIGBT with Diode IXGT 31N60D1 IC25 = 60 AVCE(sat) = 1.7 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 V GEC (TAB)VGES Continuous 20 VVGEM Transient 30 VTO-247 ADIC25 TC = 25C60 A(IXGH)IC90 TC = 90C31 AICM TC = 25C, 1

Ultra-Low VCE(sat) IGBT IXGH 31N60 VCES = 600 VIXGT 31N60 IC25 = 60 AVCE(sat) = 1.7 VSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 MW 600 V C(TAB)EVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C60 ATO-268IC90 TC = 90C31 AICM TC = 25C, 1 ms 80 AGSSOA VGE= 15 V, TVJ = 125C, RG = 1

GenX3TM 600V IGBT VCES = 600VIXGH36N60B3D1w/ Diode IC110 = 36A VCE(sat) 1.8V Medium-Speed Low-Vsat PT IGBTfor 5 - 40kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VC (TAB)EVGES Continuous 20 VVGEM Transient 30 VIC110 TC = 110C 36 AG = Gate C = Col

Advance Technical InformationVCES = 900 VIXGH 32N90B2D1HiPerFASTTM IGBTIC25 = 64 AIXGT 32N90B2D1with Fast DiodeVCE(sat) = 2.7 Vtfi typ = 150 nsB2-ClassHigh Speed IGBTs withUltrafast DiodeSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 MW 900 VC (TAB)VGES Continuous 20 VGCVGEM Transient

Advance Technical InformationIXGH 32N90B2 VCES = 900 VHiPerFASTTM IGBTIXGT 32N90B2 IC25 = 64 AB2-Class High Speed IGBTsVCE(sat) = 2.7 Vtfi typ = 150 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGVGEM Transient 30 V CEIC25 TC = 25C (limited by leads)

IXGH 32N60BU1 VCES = 600 VHiPerFASTTM IGBTIC25 = 60 Awith DiodeVCE(sat) = 2.3 Vtfi = 80 nsSymbol Test Conditions Maximum RatingsTO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 V EG = Gate, C = Collector,IC25 TC = 25C60 AE = Emitter, TAB = CollectorIC90 TC = 90C32 AIC

HiPerFASTTM IGBT IXGH39N60B VCES = 600 VIXGH39N60BD1 IC25 = 76 AIXGT39N60B VCE(sat) = 1.7 VIXGT39N60BD1 tfi = 200 nsPreliminary data(D1)TO-268Symbol Test Conditions Maximum Ratings (IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VTO-247 AD (IXGH)IC25 TC = 25C76 AIC90 TC =

Preliminary Technical InformationHigh-Gain IGBT VCES = 600VIXGH30N60B4IC110 = 30A VCE(sat) 1.7V tfi(typ) = 88nsMedium-Speed PT Trench IGBTTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VC TabEVGEM Transient 30 VIC25 TC = 25C 66 AG = Ga

Advance Technical DataVCES = 600 VHiPerFASTTM IGBT IXGH 30N60B2D1IC25 = 70 AIXGT 30N60B2D1VCE(sat)

HiPerFASTTM IGBT IXGH32N60B VCES = 600 VIC25 = 60 AVCE(sat) = 2.5 Vtfi = 80 nsSymbol Test Conditions Maximum RatingsTO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VC (TAB)VGEM Transient 30 VGCIC25 TC = 25C60 A EIC90 TC = 90C32 AG = Gate, C = Collector,ICM TC = 25C, 1 ms 120 AE = Emitter, TAB = Col

IXGH 32N60AIXGH 32N60ASVCES = 600 VIC25 = 60 AHiPerFASTTM IGBTVCE(sat) = 2.9 Vtfi = 125 nsTO-247 SMD(32N60AS)Symbol Test Conditions Maximum RatingsC (TAB)VCES TJ = 25C to 150C 600 V GEVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VTO-247 ADVGEM Transient 30 VIC25 TC = 25C60 AIC90 TC = 90C32 AC (TAB)GICM TC = 25C, 1 ms 120