IXGH40N120C3 Specs and Replacement

Type Designator: IXGH40N120C3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 380 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.4(max) V @25℃

tr ⓘ - Rise Time, typ: 33 nS

Coesⓘ - Output Capacitance, typ: 225 pF

Package: TO247

 IXGH40N120C3 Substitution

- IGBTⓘ Cross-Reference Search

 

IXGH40N120C3 datasheet

 ..1. Size:169K  ixys
 ixgh40n120c3.pdf pdf_icon

IXGH40N120C3

Preliminary Technical Information TM VCES = 1200V GenX3 1200V IGBT IXGH40N120C3 IC110 = 40A VCE(sat) 4.4V High speed PT IGBTs tfi(typ) = 57ns for 20 - 50 kHz switching Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V TO-247 (IXGH) VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 ... See More ⇒

 0.1. Size:196K  ixys
 ixgh40n120c3d1.pdf pdf_icon

IXGH40N120C3

Preliminary Technical Information VCES = 1200V GenX3TM C3-Class IXGH40N120C3D1 IC110 = 40A IGBT w/Diode VCE(sat) 4.4V tfi(typ) = 57ns High Speed PT IGBT for 20 - 50 kHz Switching Symbol Test Conditions Maximum Ratings TO-247 VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V G TAB ... See More ⇒

 4.1. Size:213K  ixys
 ixgh40n120b2d1.pdf pdf_icon

IXGH40N120C3

High Voltage IGBTs VCES = 1200V IXGH40N120B2D1 w/Diode IXGT40N120B2D1 IC110 = 40A VCE(sat) 3.5V tfi(typ) = 140ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V G C (TAB) C VGEM Transient 30 V E IC25 TC = 25 C (Limited by Lead) 75 A IC110 TC = ... See More ⇒

 4.2. Size:168K  ixys
 ixgh40n120a2.pdf pdf_icon

IXGH40N120C3

IXGH 40N120A2 IXGT 40N120A2 IXGH 40N120A2 VCES = 1200 V High Voltage IGBT IXGT 40N120A2 IC25 = 75 A Low VCE(sat) VCE(sat) 2.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VCES TJ = 25 C to 150 C 1200 V VCES TJ = 25 C to 150 C 1200 V VGES Continuous 20 V VGEM Transient 30 V G C IC25 TC = 25 C, IGBT chip capabilit... See More ⇒

SHOW MORE

Specs: IXGH36N60A3, IXGH36N60A3D4, IXGH36N60B3, IXGH36N60B3C1, IXGH36N60B3D1, IXGH36N60B3D4, IXGH40N120A2, IXGH40N120B2D1, FGH60N60SFD, IXGH40N120C3D1, IXGH40N60B, IXGH40N60B2, IXGH40N60B2D1, IXGH40N60C, IXGH40N60C2, IXGH40N60C2D1, IXGH42N30C3

Keywords - IXGH40N120C3 transistor spec

 IXGH40N120C3 cross reference
 IXGH40N120C3 equivalent finder
 IXGH40N120C3 lookup
 IXGH40N120C3 substitution
 IXGH40N120C3 replacement