IXGH40N60B IGBT. Datasheet pdf. Equivalent

   Type Designator: IXGH40N60B
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 310 pF
   Qgⓘ - Total Gate Charge, typ: 116 nC
   Package: TO247

IXGH40N60B Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXGH40N60B Datasheet (PDF)

..1. Size:291K ixys
ixgh40n60b ixgt40n60b.pdf

IXGH 40N60B VCES = 600 VHiPerFASTTM IGBTIXGT 40N60B IC25 = 75 AVCE(sat) = 2.1 Vtfi = 180 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-247 AD(IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C75 AIC110 TC = 110C40 ATO-268 (D3)ICM TC = 25C

..2. Size:291K ixys
ixgh40n60b.pdf