IXGH40N60C2 Specs and Replacement
Type Designator: IXGH40N60C2
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 75 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
tr ⓘ - Rise Time, typ: 20 nS
Coesⓘ - Output Capacitance, typ: 180 pF
Package: TO247
IXGH40N60C2 Substitution
IXGH40N60C2 datasheet
ixgh40n60c2.pdf
VCES = 600 V IXGH 40N60C2 HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60C2 C2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V E C (TAB) VGES Continuous 20 V VGEM Transient 30 V TO-247 (IXGH) IC25 TC = 25 C (limited by leads) 75 A IC110 TC = 1... See More ⇒
ixgh40n60c2 ixgt40n60c2.pdf
VCES = 600 V IXGH 40N60C2 HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60C2 C2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V E C (TAB) VGES Continuous 20 V VGEM Transient 30 V TO-247 (IXGH) IC25 TC = 25 C (limited by leads) 75 A IC110 TC = 1... See More ⇒
ixgh40n60c2d1 ixgt40n60c2d1 ixgg40n60c2d1.pdf
HiPerFASTTM IGBT IXGH40N60C2D1 VCES = 600V IXGT40N60C2D1 IC25 = 75A with Diode IXGJ40N60C2D1 VCE(SAT) 2.7V tfi(typ) = 32ns C2-Class High Speed IGBTs TO-247(IXGH) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V C (TAB) C E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V TO-268 (D3) ( IXGT) VGEM Transient 30 V... See More ⇒
ixgh40n60c2d1.pdf
HiPerFASTTM IGBTs VCES = 600V IXGT40N60C2D1 IC110 = 40A w/ Diode IXGJ40N60C2D1 VCE(SAT) 2.7V IXGH40N60C2D1 tfi(typ) = 32ns C2-Class High Speed IGBTs TO-268 (IXGT) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-268 (IXGJ) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V ... See More ⇒
Specs: IXGH40N120A2 , IXGH40N120B2D1 , IXGH40N120C3 , IXGH40N120C3D1 , IXGH40N60B , IXGH40N60B2 , IXGH40N60B2D1 , IXGH40N60C , MBQ50T65FDSC , IXGH40N60C2D1 , IXGH42N30C3 , IXGH45N120 , IXGH48N60A3 , IXGH48N60A3D1 , IXGH48N60B3 , IXGH48N60B3C1 , IXGH48N60B3D1 .
Keywords - IXGH40N60C2 transistor spec
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IXGH40N60C2 equivalent finder
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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