All IGBT. IXGH40N60C2 Datasheet

 

IXGH40N60C2 IGBT. Datasheet pdf. Equivalent

Type Designator: IXGH40N60C2

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.7V

Maximum Collector Current |Ic|, A: 75A

Rise Time, nS: 32

Package: TO247

IXGH40N60C2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGH40N60C2 Datasheet (PDF)

1.1. ixgh40n60b2d1 ixgt40n60b2d1.pdf Size:606K _ixys

IXGH40N60C2
IXGH40N60C2

VCES = 600 V HiPerFASTTM IGBT IXGH 40N60B2D1 IC25 = 75 A IXGT 40N60B2D1 VCE(sat) < 1.7 V Optimized for 10-25 KHz hard tfi typ = 82 ns switching and up to 150 KHz resonant switching Preliminary Data Sheet TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30

1.2. ixgh40n60b2 ixgt40n60b2.pdf Size:578K _ixys

IXGH40N60C2
IXGH40N60C2

Advance Technical Data VCES = 600 V IXGH 40N60B2 HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60B2 VCE(sat) < 1.7 V Optimized for 10-25 KHz hard tfi typ = 82 ns switching and up to 150 KHz resonant switching TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30 V

1.3. ixgh40n60c2 ixgt40n60c2.pdf Size:149K _ixys

IXGH40N60C2
IXGH40N60C2

VCES = 600 V IXGH 40N60C2 HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60C2 C2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V G VCGR TJ = 25C to 150C; RGE = 1 M? 600 V E C (TAB) VGES Continuous 20 V VGEM Transient 30 V TO-247 (IXGH) IC25 TC = 25C (limited by leads) 75 A IC110 TC = 110C40 A I

1.4. ixgh40n60c2d1 ixgt40n60c2d1 ixgg40n60c2d1.pdf Size:162K _ixys

IXGH40N60C2
IXGH40N60C2

HiPerFASTTM IGBT IXGH40N60C2D1 VCES = 600V IXGT40N60C2D1 IC25 = 75A with Diode ? ? IXGJ40N60C2D1 VCE(SAT) ? 2.7V ? ? tfi(typ) = 32ns C2-Class High Speed IGBTs TO-247(IXGH) Symbol Test Conditions Maximum Ratings G VCES TJ = 25C to 150C 600 V C (TAB) C E VCGR TJ = 25C to 150C, RGE = 1M? 600 V VGES Continuous 20 V TO-268 (D3) ( IXGT) VGEM Transient 30 V IC25 TC = 25C (li

1.5. ixgh40n60b2.pdf Size:575K _igbt

IXGH40N60C2
IXGH40N60C2

Advance Technical Data VCES = 600 V IXGH 40N60B2 HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60B2 VCE(sat) < 1.7 V Optimized for 10-25 KHz hard tfi typ = 82 ns switching and up to 150 KHz resonant switching TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transi

1.6. ixgh40n60a.pdf Size:52K _igbt

IXGH40N60C2
IXGH40N60C2

VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGH/IXGM 40 N60 600 V 75 A 2.5 V High speed IGBT IXGH/IXGM 40 N60A 600 V 75 A 3.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C, limited by leads 75 A IC90 TC = 90°C40 A TO-204 AE (IXGM) I

1.7. ixgh40n60.pdf Size:52K _igbt

IXGH40N60C2
IXGH40N60C2

VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGH/IXGM 40 N60 600 V 75 A 2.5 V High speed IGBT IXGH/IXGM 40 N60A 600 V 75 A 3.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C, limited by leads 75 A IC90 TC = 90°C40 A TO-204 AE (IXGM) I

1.8. ixgh40n60b.pdf Size:291K _igbt

IXGH40N60C2
IXGH40N60C2

IXGH 40N60B VCES = 600 V HiPerFASTTM IGBT IXGT 40N60B IC25 = 75 A VCE(sat) = 2.1 V tfi = 180 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C75 A IC110 TC = 110°C40 A TO-268 (D3) ICM TC = 25°C

1.9. ixgh40n60b2d1.pdf Size:513K _igbt

IXGH40N60C2
IXGH40N60C2

VCES = 600 V HiPerFASTTM IGBT IXGH 40N60B2D1 IC25 = 75 A IXGT 40N60B2D1 VCE(sat) < 1.7 V Optimized for 10-25 KHz hard tfi typ = 82 ns switching and up to 150 KHz resonant switching Preliminary Data Sheet TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G E C (TAB) VGES Continuous ±20 V VGEM Tra

1.10. ixgh40n60c2d1.pdf Size:168K _igbt

IXGH40N60C2
IXGH40N60C2

HiPerFASTTM IGBTs VCES = 600V IXGT40N60C2D1 IC110 = 40A w/ Diode IXGJ40N60C2D1 ≤ ≤ VCE(SAT) ≤ 2.7V ≤ ≤ IXGH40N60C2D1 tfi(typ) = 32ns C2-Class High Speed IGBTs TO-268 (IXGT) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-268 (IXGJ) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V G VGEM Transient ±30 V

1.11. ixgh40n60c2.pdf Size:145K _igbt

IXGH40N60C2
IXGH40N60C2

VCES = 600 V IXGH 40N60C2 HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60C2 C2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V TO-247 (IXGH) IC25 TC = 25°C (limited by leads) 75 A IC110 TC = 1

1.12. ixgh40n60c.pdf Size:122K _igbt

IXGH40N60C2
IXGH40N60C2

VCES = 600 V IXGH 40N60C HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60C LightspeedTM Series VCE(sat) = 2.5 V tfi typ = 75 ns Preliminary Data TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C75 A TO-247 AD (IXGH) IC110 TC = 11

Datasheet: IXGH40N120A2 , IXGH40N120B2D1 , IXGH40N120C3 , IXGH40N120C3D1 , IXGH40N60B , IXGH40N60B2 , IXGH40N60B2D1 , IXGH40N60C , IGW30N100T , IXGH40N60C2D1 , IXGH42N30C3 , IXGH45N120 , IXGH48N60A3 , IXGH48N60A3D1 , IXGH48N60B3 , IXGH48N60B3C1 , IXGH48N60B3D1 .

 


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