IXGH42N30C3 Datasheet and Replacement

VCES = 300VIXGA42N30C3GenX3TM 300V IGBTIC110 = 42AIXGH42N30C3 VCE(sat) 1.85V High Speed PT IGBTs forIXGP42N30C350-150kHz switchingtfi typ = 65nsTO-263 (IXGA)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 300 VGVCGR TJ = 25C to 150C, RGE = 1M 300 V EC (TAB)VGES Continuous 20 VTO-247 (IXGH)VGEM Transient 30 V

VCES = 600 VIXGH 40N60C2HiPerFASTTM IGBTIC25 = 75 AIXGT 40N60C2C2-Class High Speed IGBTsVCE(sat) = 2.7 Vtfi typ = 32 nsTO-268 (IXGT)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 V E C (TAB)VGES Continuous 20 VVGEM Transient 30 VTO-247 (IXGH)IC25 TC = 25C (limited by leads) 75 AIC110 TC = 1

IXGA48N60C3 VCES = 600VGenX3TM 600V IGBTIXGH48N60C3IC110 = 48AIXGP48N60C3VCE(sat) 2.5VHigh Speed PT IGBTs fortfi(typ) = 38ns40-100kHz switchingTO-263 (IXGA)Symbol Test Conditions Maximum RatingsGVCES TC = 25C to 150C 600 VE (TAB)VCGR TJ = 25C to 150C, RGE = 1M 600 VTO-247 (IXGH)VGES Continuous 20 VVGEM Transient 30 VI

VCES IC25 VCE(sat)Low VCE(sat) IGBT IXGH/IXGM 40 N60 600 V 75 A 2.5 VHigh speed IGBT IXGH/IXGM 40 N60A 600 V 75 A 3.0 VSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C, limited by leads 75 AIC90 TC = 90C40 A TO-204 AE (IXGM)I

VCES = 600VGenX3TM 600V IGBTIXGH48N60A3D1w/Diode IC110 = 48AVCE(sat) 1.35VUltra Low Vsat PT IGBT forup to 5kHz switchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VGC TabVCGR TJ = 25C to 150C, RGE = 1M 600 VEVGES Continuous 20 VVGEM Transient 30 V G = Gate C = CollectorE = Emitter Tab = Colle

High Voltage IGBTs VCES = 1200VIXGH40N120B2D1w/DiodeIXGT40N120B2D1IC110 = 40AVCE(sat) 3.5Vtfi(typ) = 140nsTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VGC (TAB)CVGEM Transient 30 VEIC25 TC = 25C (Limited by Lead) 75 AIC110 TC =

VCES IC25 VCE(sat)Low VCE(sat) IGBT IXGH/IXGM 40 N60 600 V 75 A 2.5 VHigh speed IGBT IXGH/IXGM 40 N60A 600 V 75 A 3.0 VSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C, limited by leads 75 AIC90 TC = 90C40 A TO-204 AE (IXGM)I

HiPerFASTTM IGBTIXGH40N60C2D1 VCES = 600VIXGT40N60C2D1 IC25 = 75Awith Diode IXGJ40N60C2D1 VCE(SAT) 2.7V tfi(typ) = 32nsC2-Class High Speed IGBTsTO-247(IXGH)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 V C (TAB)CEVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VTO-268 (D3) ( IXGT)VGEM Transient 30 V

IXGH 40N60B VCES = 600 VHiPerFASTTM IGBTIXGT 40N60B IC25 = 75 AVCE(sat) = 2.1 Vtfi = 180 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-247 AD(IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C75 AIC110 TC = 110C40 ATO-268 (D3)ICM TC = 25C

IXGA48N60B3 VCES = 600VGenX3TM 600V IGBTIXGP48N60B3IC110 = 48AIXGH48N60B3VCE(sat) 1.8VMedium speed low Vsat PTIGBTs 5-40 kHz switchingTO-263 (IXGA)Symbol Test Conditions Maximum RatingsGEVCES TC = 25C to 150C 600 V (TAB)VCGR TJ = 25C to 150C, RGE = 1M 600 VTO-220 (IXGP)VGES Continuous 20 VVGEM Transient 30 VIC110 TC = 1

VCES = 600 VIXGH 40N60CHiPerFASTTM IGBTIC25 = 75 AIXGT 40N60CLightspeedTM SeriesVCE(sat) = 2.5 Vtfi typ = 75 nsPreliminary DataTO-268Symbol Test Conditions Maximum Ratings (IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C75 ATO-247 AD (IXGH)IC110 TC = 11

HiPerFASTTM IGBTsVCES = 600VIXGT40N60C2D1IC110 = 40Aw/ DiodeIXGJ40N60C2D1 VCE(SAT) 2.7V IXGH40N60C2D1tfi(typ) = 32nsC2-Class High Speed IGBTsTO-268 (IXGT)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-268 (IXGJ)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 V

VCES = 600VIXGH48N60C3D1GenX3TM 600V IGBTIC110 = 48Awith DiodeVCE(sat) 2.5Vtfi(typ) = 38nsHigh speed PT IGBT for40-100kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VCEVGEM Transient 30 V ( TAB )IC25 TC = 25C (Limited by Leads)

Preliminary Technical InformationTMVCES = 1200VGenX3 1200V IGBT IXGH40N120C3IC110 = 40AVCE(sat) 4.4VHigh speed PT IGBTstfi(typ) = 57nsfor 20 - 50 kHz switchingSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VTO-247 (IXGH)VCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25

IXGH 40N120A2IXGT 40N120A2IXGH 40N120A2 VCES = 1200 VHigh Voltage IGBTIXGT 40N120A2 IC25 = 75 ALow VCE(sat)VCE(sat) 2.0 VPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 (IXFH)VCES TJ = 25C to 150C 1200 VVCES TJ = 25C to 150C 1200 VVGES Continuous 20 VVGEM Transient 30 VGCIC25 TC = 25C, IGBT chip capabilit

VCES = 600 VHiPerFASTTM IGBT IXGH 40N60B2D1IC25 = 75 AIXGT 40N60B2D1VCE(sat)

VCES = 600 VIXGH 40N60C2HiPerFASTTM IGBTIC25 = 75 AIXGT 40N60C2C2-Class High Speed IGBTsVCE(sat) = 2.7 Vtfi typ = 32 nsTO-268 (IXGT)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 V E C (TAB)VGES Continuous 20 VVGEM Transient 30 VTO-247 (IXGH)IC25 TC = 25C (limited by leads) 75 AIC110 TC = 1

Ultra-Low VCE(sat) IGBT IXGH 41N60 VCES = 600 VIC25 = 76 AVCE(sat) = 1.6 VSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VGVGEM Transient 30 VCEIC25 TC = 25C76 AIC90 TC = 90C41 AICM TC = 25C, 1 ms 152 AG = Gate, C = Collector,E = Emitter, TAB = CollectorSSOA VG

Advance Technical DataVCES = 600 VIXGH 40N60B2HiPerFASTTM IGBTIC25 = 75 AIXGT 40N60B2VCE(sat)

GenX3TM 600V IGBTs IXGI48N60C3 VCES = 600V IXGA48N60C3IC110 = 48A IXGP48N60C3 2.5VHigh-Speed PT IGBTs for VCE(sat) 40-100kHz Switching IXGH48N60C3tfi(typ) = 38nsSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 V FeaturesVGES Continuous 20 V Optimized for Low Switching LossesVGEM Tra

IXGH 45N120 VCES = 1200 VIXGT 45N120 IC25 = 75 AIGBTVCE(sat) = 2.5 VHigh Voltage, Low VCE(sat)tfi(typ) = 390 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C, limited by leads 75 ATO-247 AD (I

IXGA48N60A3 VCES = 600VGenX3TM 600VIXGP48N60A3IGBTs IC110 = 48AIXGH48N60A3VCE(sat) 1.35VUltra Low Vsat PT IGBTs forTO-263 (IXGA)up to 5kHz switchingGESymbol Test Conditions Maximum RatingsC (Tab)VCES TJ = 25C to 150C 600 VTO-220 (IXGP)VCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGIC25 TC =

VCES IC25 VCE(sat) tfiHiPerFASTTM IGBTIXGH 40N30/S 300 V 60 A 1.8 V 220nsIXGH 40N30A/S 300 V 60 A 2.1 V 120nsIXGH 40N30B/S 300 V 60 A 2.4 V 75 nsSymbol Test Conditions Maximum Ratings TO-247 SMD*VCES TJ = 25C to 150C 300 VVCGR TJ = 25C to 150C; RGE = 1 M 300 VC (TAB)GVGES Continuous 20 VEVGEM Transient 30 VTO-247 ADIC25 TC = 25C 60 AIC90 TC = 90C

VCES IC25 VCE(sat) tfiHiPerFASTTM IGBTIXGH 40N30/S 300 V 60 A 1.8 V 220nsIXGH 40N30A/S 300 V 60 A 2.1 V 120nsIXGH 40N30B/S 300 V 60 A 2.4 V 75 nsSymbol Test Conditions Maximum Ratings TO-247 SMD*VCES TJ = 25C to 150C 300 VVCGR TJ = 25C to 150C; RGE = 1 M 300 VC (TAB)GVGES Continuous 20 VEVGEM Transient 30 VTO-247 ADIC25 TC = 25C 60 AIC90 TC = 90C

Advance Technical InformationHigh VoltageVCES = 2500VIXGT4N250CIGBTsIXGH4N250CIC110 = 4AVCE(sat) 6.0VTO-268 (IXGT)GSymbol Test Conditions Maximum Ratings EC (Tab)VCES TC = 25C to 150C 2500 VVCGR TJ = 25C to 150C, RGE = 1M 2500 VTO-247 (IXGH)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C 13 AIC110 TC = 110C 4 A

Preliminary Technical InformationGenX3TM 600V IGBT VCES = 600VIXGH48N60B3C1w/ SiC Anti-Parallel IC110 = 48ADiode VCE(sat) 1.8Vtfi(typ) = 116nsMedium Speed Low Vsat PTIGBT 5 - 40 kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 V ( TAB )CEVGES Continuous 20

Advance Technical DataVCES = 600 VIXGH 40N60B2HiPerFASTTM IGBTIC25 = 75 AIXGT 40N60B2VCE(sat)

Preliminary Technical InformationVCES = 600VGenX3TM 600V IGBTIXGH48N60B3D1with Diode IC110 = 48AVCE(sat) 1.8VMedium speed low Vsat PTIGBTs 5-40 kHz switchingTO-247(IXGH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 V G ( TAB )CEI

Preliminary Technical InformationGenX3TM 600V IGBT VCES = 600VIXGH48N60C3C1w/ SiC Anti-Parallel IC110 = 48ADiode VCE(sat) 2.5Vtfi(typ) = 38nsHigh Speed PT IGBT for40 - 100kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGCVGES Continuous 20 V E ( TAB )VGEM

IXGH 40N60B VCES = 600 VHiPerFASTTM IGBTIXGT 40N60B IC25 = 75 AVCE(sat) = 2.1 Vtfi = 180 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-247 AD(IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C75 AIC110 TC = 110C40 ATO-268 (D3)ICM TC = 25C

IXGH40N30BD1VCES = 300 VHiPerFASTTM IGBTIC25 = 60 AVCE(sat) = 2.4 Vtfi = 75 nsTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25 C to 150 C 300 VVCGR TJ = 25 C to 150 C; RGE = 1 M 300 VVGES Continuous 20 VGC (TAB)VGEM Transient 30 VCEIC25 TC = 25 C60 AG = Gate, C = Collector,IC90 TC = 90 C40 AE = Emitter, TAB = CollectorICM TC = 25 C, 1 ms 160

Preliminary Technical InformationVCES = 1200VGenX3TM C3-ClassIXGH40N120C3D1IC110 = 40AIGBT w/Diode VCE(sat) 4.4V tfi(typ) = 57nsHigh Speed PT IGBTfor 20 - 50 kHz SwitchingSymbol Test Conditions Maximum RatingsTO-247VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VGTAB

VCES = 600 VHiPerFASTTM IGBT IXGH 40N60B2D1IC25 = 75 AIXGT 40N60B2D1VCE(sat)