IXGH48N60B3 Specs and Replacement

Type Designator: IXGH48N60B3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 120 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8(max) V @25℃

tr ⓘ - Rise Time, typ: 25 nS

Coesⓘ - Output Capacitance, typ: 170 pF

Package: TO247

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IXGH48N60B3 datasheet

 ..1. Size:221K  ixys
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IXGH48N60B3

IXGA48N60B3 VCES = 600V GenX3TM 600V IGBT IXGP48N60B3 IC110 = 48A IXGH48N60B3 VCE(sat) 1.8V Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-263 (IXGA) Symbol Test Conditions Maximum Ratings G E VCES TC = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V TO-220 (IXGP) VGES Continuous 20 V VGEM Transient 30 V IC110 TC = 1... See More ⇒

 0.1. Size:185K  ixys
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IXGH48N60B3

Preliminary Technical Information GenX3TM 600V IGBT VCES = 600V IXGH48N60B3C1 w/ SiC Anti-Parallel IC110 = 48A Diode VCE(sat) 1.8V tfi(typ) = 116ns Medium Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V ( TAB ) C E VGES Continuous 20... See More ⇒

 0.2. Size:200K  ixys
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IXGH48N60B3

Preliminary Technical Information VCES = 600V GenX3TM 600V IGBT IXGH48N60B3D1 with Diode IC110 = 48A VCE(sat) 1.8V Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-247(IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G ( TAB ) C E I... See More ⇒

 5.1. Size:223K  ixys
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IXGH48N60B3

IXGA48N60C3 VCES = 600V GenX3TM 600V IGBT IXGH48N60C3 IC110 = 48A IXGP48N60C3 VCE(sat) 2.5V High Speed PT IGBTs for tfi(typ) = 38ns 40-100kHz switching TO-263 (IXGA) Symbol Test Conditions Maximum Ratings G VCES TC = 25 C to 150 C 600 V E (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V TO-247 (IXGH) VGES Continuous 20 V VGEM Transient 30 V I... See More ⇒

Specs: IXGH40N60B2D1, IXGH40N60C, IXGH40N60C2, IXGH40N60C2D1, IXGH42N30C3, IXGH45N120, IXGH48N60A3, IXGH48N60A3D1, RJH30E2DPP, IXGH48N60B3C1, IXGH48N60B3D1, IXGH48N60C3, IXGH48N60C3C1, IXGH48N60C3D1, IXGH4N250C, IXGH50N120C3, IXGH50N60B2

Keywords - IXGH48N60B3 transistor spec

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