IXGH50N60B4 Specs and Replacement

Type Designator: IXGH50N60B4

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃

tr ⓘ - Rise Time, typ: 68 nS

Coesⓘ - Output Capacitance, typ: 105 pF

Package: TO247

 IXGH50N60B4 Substitution

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IXGH50N60B4 datasheet

 ..1. Size:218K  ixys
 ixgh50n60b4.pdf pdf_icon

IXGH50N60B4

VCES = 600V High-Gain IGBTs IXGA50N60B4 IC110 = 50A IXGP50N60B4 VCE(sat) 1.8V IXGH50N60B4 Low-Vsat PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V C C (Tab) E IC25 TC = 25 C 1... See More ⇒

 0.1. Size:198K  ixys
 ixgh50n60b4d1.pdf pdf_icon

IXGH50N60B4

VCES = 600V High-Gain IGBTs IXGH50N60B4D1 IC110 = 50A w/Diode IXGQ50N60B4D1 VCE(sat) 1.8V Low-Vsat PT Trench IGBTs TO-247 (IXGH) G C Tab E Symbol Test Conditions Maximum Ratings TO-3P (IXGQ) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V C E IC25 TC = 25 C 100 A Tab IC... See More ⇒

 4.1. Size:585K  ixys
 ixgh50n60b2 ixgt50n60b2.pdf pdf_icon

IXGH50N60B4

VCES = 600 V IXGH 50N60B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N60B2 VCE(sat) = 2.0 V tfi typ = 65 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by leads) 75 A (IXGT) IC11... See More ⇒

 4.2. Size:181K  ixys
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IXGH50N60B4

IXGH 50N60B HiPerFASTTM IGBT VCES = 600 V IXGK 50N60B IC25 = 75 A IXGT 50N60B VCE(sat) = 2.3 V IXGJ 50N60B tfi(typ) = 120 ns TO-247 AD (IXGH) C C (TAB) Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 600 V TO-268 (D3) ( IXGT) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) E IC25 TC = 25 C75 A TO-268 Le... See More ⇒

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Specs: IXGH48N60B3C1, IXGH48N60B3D1, IXGH48N60C3, IXGH48N60C3C1, IXGH48N60C3D1, IXGH4N250C, IXGH50N120C3, IXGH50N60B2, GT45F122, IXGH50N60B4D1, IXGH50N60C2, IXGH50N60C4, IXGH50N60C4D1, IXGH50N90B2, IXGH50N90B2D1, IXGH56N60A3, IXGH56N60B3

Keywords - IXGH50N60B4 transistor spec

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