All IGBT. IXGH50N60C4 Datasheet

 

IXGH50N60C4 Datasheet and Replacement


   Type Designator: IXGH50N60C4
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 90 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 66 nS
   Coesⓘ - Output Capacitance, typ: 100 pF
   Package: TO247
      - IGBT Cross-Reference

 

IXGH50N60C4 Datasheet (PDF)

 ..1. Size:216K  ixys
 ixgh50n60c4.pdf pdf_icon

IXGH50N60C4

VCES = 600VHigh-Gain IGBTs IXGA50N60C4IC110 = 46AIXGP50N60C4 VCE(sat) 2.3V IXGH50N60C4High-Speed PT Trench IGBT TO-263 AA (IXGA)GEC (Tab)TO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VC C (Tab)EIC25 TC = 25C

 0.1. Size:196K  ixys
 ixgh50n60c4d1.pdf pdf_icon

IXGH50N60C4

VCES = 600VHigh-Gain IGBTs IXGQ50N60C4D1IC110 = 46Aw/ Diode IXGH50N60C4D1 VCE(sat) 2.3V High-Speed PT Trench IGBTsTO-3P (IXGQ)GCESymbol Test Conditions Maximum RatingsTabVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VTO-247 (IXGH)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C 90 AIC110 TC = 110

 4.1. Size:584K  ixys
 ixgh50n60c2.pdf pdf_icon

IXGH50N60C4

Advance Technical DataVCES = 600 VIXGH 50N60C2HiPerFASTTM IGBTIC25 = 75 AC2-Class High Speed IGBTs IXGT 50N60C2VCE(sat) = 2.7 Vtfi typ = 48 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by

 4.2. Size:586K  ixys
 ixgh50n60c2 ixgt50n60c2.pdf pdf_icon

IXGH50N60C4

Advance Technical DataVCES = 600 VIXGH 50N60C2HiPerFASTTM IGBTIC25 = 75 AC2-Class High Speed IGBTs IXGT 50N60C2VCE(sat) = 2.7 Vtfi typ = 48 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by

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Datasheet: IXGH48N60C3C1 , IXGH48N60C3D1 , IXGH4N250C , IXGH50N120C3 , IXGH50N60B2 , IXGH50N60B4 , IXGH50N60B4D1 , IXGH50N60C2 , NGD8201N , IXGH50N60C4D1 , IXGH50N90B2 , IXGH50N90B2D1 , IXGH56N60A3 , IXGH56N60B3 , IXGH56N60B3D1 , IXGH60N30C3 , IXGH60N60B2 .

History: STGP19NC60HD | IQIB75N60A3 | RJP60V0DPM | GT10G101 | MG300N1US1 | APT75GP120JDQ3 | IXGT16N170

Keywords - IXGH50N60C4 transistor datasheet

 IXGH50N60C4 cross reference
 IXGH50N60C4 equivalent finder
 IXGH50N60C4 lookup
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 IXGH50N60C4 replacement

 

 
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