IXGH60N30C3 IGBT. Datasheet pdf. Equivalent

   Type Designator: IXGH60N30C3
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 300 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 28 nS
   Coesⓘ - Output Capacitance, typ: 240 pF
   Qgⓘ - Total Gate Charge, typ: 101 nC
   Package: TO247

IXGH60N30C3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXGH60N30C3 Datasheet (PDF)

..1. Size:38K ixys
ixgh60n30c3.pdf

Advance Technical InformationVCES = 300VIXGH60N30C3GenX3TM 300V IGBTIC110 = 60A VCE(sat) 1.8V High Speed IGBTs fortfi typ = 70ns50-150kHz switchingTO-247 ADSymbol Test Conditions Maximum Ratings (IXGH)VCES TJ = 25C to 150C 300 VVCGR TJ = 25C to 150C, RGE = 1M 300 VGVGES Continuous 20 VC (TAB)EVGEM Transient 30 VIC2

7.1. Size:583K ixys
ixgh60n60c2 ixgt60n60c2.pdf

Advance Technical DataVCES = 600 VIXGH 60N60C2HiPerFASTTM IGBTIC25 = 75 AC2-Class High Speed IGBTs IXGT 60N60C2VCE(sat) = 2.5 Vtfi typ = 35 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by

7.2. Size:163K ixys
ixgh60n60c3.pdf

GenX3TM 600V VCES = 600VIXGH60N60C3IGBT IC110 = 60A VCE(sat) 2.5V tfi (typ) = 50nsHigh Speed PT IGBT for40-100kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VC TabEVGEM Transient 30 VIC25 TC = 25C (Limited by Leads) 75 AG

7.3. Size:284K ixys
ixgh60n60c3d1 ixgt60n60c3d1.pdf

VCES = 600VGenX3TM 600V IGBTs IXGH60N60C3D1 IC110 = 60Awith Diode IXGT60N60C3D1**Obsolete Part Number VCE(sat) 2.5V tfi (typ) = 50nsHigh Speed PT IGBTs for40-100kHz switchingTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VCC (Tab)EVGES Continuous 20 VVGE

7.4. Size:236K ixys
ixgh60n60c3d1.pdf

VCES = 600VGenX3TM 600V IGBTs IXGH60N60C3D1IC110 = 60Awith Diode IXGT60N60C3D1 VCE(sat) 2.5V tfi (typ) = 50nsHigh Speed PT IGBTs for40-100kHz switchingTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VCC (Tab)EVGES Continuous 20 VVGEM Transient 30 VIC25

7.5. Size:94K ixys
ixgh60n60.pdf

VCES = 600 VUltra-Low VCE(sat) IGBT IXGH 60N60IC25 = 75 AIXGK 60N60 VCE(sat) = 1.7 VIXGT 60N60Symbol Test Conditions Maximum RatingsTO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268IC25 TC = 25C, limited by leads 75 A(IXGT)IC90 TC = 90C60 AGEICM TC = 25C,

7.6. Size:581K ixys
ixgh60n60c2.pdf