IXGH60N30C3 Specs and Replacement

Type Designator: IXGH60N30C3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 300 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃

tr ⓘ - Rise Time, typ: 28 nS

Coesⓘ - Output Capacitance, typ: 240 pF

Package: TO247

 IXGH60N30C3 Substitution

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IXGH60N30C3 datasheet

 ..1. Size:38K  ixys
ixgh60n30c3.pdf pdf_icon

IXGH60N30C3

Advance Technical Information VCES = 300V IXGH60N30C3 GenX3TM 300V IGBT IC110 = 60A VCE(sat) 1.8V High Speed IGBTs for tfi typ = 70ns 50-150kHz switching TO-247 AD Symbol Test Conditions Maximum Ratings (IXGH) VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C, RGE = 1M 300 V G VGES Continuous 20 V C (TAB) E VGEM Transient 30 V IC2... See More ⇒

 7.1. Size:583K  ixys
ixgh60n60c2 ixgt60n60c2.pdf pdf_icon

IXGH60N30C3

Advance Technical Data VCES = 600 V IXGH 60N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 60N60C2 VCE(sat) = 2.5 V tfi typ = 35 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by... See More ⇒

 7.2. Size:163K  ixys
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IXGH60N30C3

GenX3TM 600V VCES = 600V IXGH60N60C3 IGBT IC110 = 60A VCE(sat) 2.5V tfi (typ) = 50ns High Speed PT IGBT for 40-100kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G VGES Continuous 20 V C Tab E VGEM Transient 30 V IC25 TC = 25 C (Limited by Leads) 75 A G ... See More ⇒

 7.3. Size:284K  ixys
ixgh60n60c3d1 ixgt60n60c3d1.pdf pdf_icon

IXGH60N30C3

VCES = 600V GenX3TM 600V IGBTs IXGH60N60C3D1 IC110 = 60A with Diode IXGT60N60C3D1* *Obsolete Part Number VCE(sat) 2.5V tfi (typ) = 50ns High Speed PT IGBTs for 40-100kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C C (Tab) E VGES Continuous 20 V VGE... See More ⇒

Specs: IXGH50N60C2, IXGH50N60C4, IXGH50N60C4D1, IXGH50N90B2, IXGH50N90B2D1, IXGH56N60A3, IXGH56N60B3, IXGH56N60B3D1, GT30F131, IXGH60N60B2, IXGH60N60C2, IXGH60N60C3, IXGH60N60C3D1, IXGH64N60A3, IXGH64N60B3, IXGH6N170, IXGH6N170A

Keywords - IXGH60N30C3 transistor spec

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