IXGH6N170A Specs and Replacement
Type Designator: IXGH6N170A
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ -
Maximum Power Dissipation: 75 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 6 A @25℃
Tj ⓘ -
Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 7(max) V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
tr ⓘ - Rise Time, typ: 40 nS
Coesⓘ - Output Capacitance, typ: 20 pF
Qg ⓘ -
Total Gate Charge, typ: 18.5 nC
Package: TO247
- IGBTⓘ Cross-Reference Search
IXGH6N170A datasheet
..1. Size:197K ixys
ixgt6n170a ixgh6n170a.pdf 

VCES = 1700V High Voltage IXGT6N170A IC25 = 6A IGBT IXGH6N170A VCE(sat) 7.0V tfi(typ) = 32ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G E VCES TC = 25 C to 150 C 1700 V C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V TO-247 (IXGH) VGEM Transient 30 V IC25 TC = 25 C 6 A IC110 TC ... See More ⇒
..2. Size:189K ixys
ixgh6n170a.pdf 

Preliminary Technical Information High Voltage VCES = 1700V IXGH6N170A IGBTs IC25 = 6A IXGT6N170A VCE(sat) 7.0V tfi(typ) = 32ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G C C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-268 (IXGT) IC25 TC = 25 C 6 A... See More ⇒
5.1. Size:181K ixys
ixgt6n170 ixgh6n170.pdf 

VCES = 1700V High Voltage IXGT6N170 IC90 = 6A IGBT IXGH6N170 VCE(sat) 4.0V tfi(typ) = 290ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G E VCES TC = 25 C to 150 C 1700 V C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V TO-247 (IXGH) VGEM Transient 30 V IC25 TC = 25 C 12 A IC90 TC =... See More ⇒
5.2. Size:78K ixys
ixgh6n170.pdf 

IXGH 6N170 High Voltage VCES = 1700 V IXGT 6N170 IC25 = 12 A IGBT VCE(sat) = 4.0 V tfi(typ) = 290 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C12 A TO-247 AD (IXGH) IC90 TC = 90 C6 A ICM TC = 25 C, 1 ms 24 A SSOA... See More ⇒
9.1. Size:583K ixys
ixgh60n60c2 ixgt60n60c2.pdf 

Advance Technical Data VCES = 600 V IXGH 60N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 60N60C2 VCE(sat) = 2.5 V tfi typ = 35 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by... See More ⇒
9.2. Size:163K ixys
ixgh60n60c3.pdf 

GenX3TM 600V VCES = 600V IXGH60N60C3 IGBT IC110 = 60A VCE(sat) 2.5V tfi (typ) = 50ns High Speed PT IGBT for 40-100kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G VGES Continuous 20 V C Tab E VGEM Transient 30 V IC25 TC = 25 C (Limited by Leads) 75 A G ... See More ⇒
9.3. Size:284K ixys
ixgh60n60c3d1 ixgt60n60c3d1.pdf 

VCES = 600V GenX3TM 600V IGBTs IXGH60N60C3D1 IC110 = 60A with Diode IXGT60N60C3D1* *Obsolete Part Number VCE(sat) 2.5V tfi (typ) = 50ns High Speed PT IGBTs for 40-100kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C C (Tab) E VGES Continuous 20 V VGE... See More ⇒
9.4. Size:236K ixys
ixgh60n60c3d1.pdf 

VCES = 600V GenX3TM 600V IGBTs IXGH60N60C3D1 IC110 = 60A with Diode IXGT60N60C3D1 VCE(sat) 2.5V tfi (typ) = 50ns High Speed PT IGBTs for 40-100kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C C (Tab) E VGES Continuous 20 V VGEM Transient 30 V IC25 ... See More ⇒
9.5. Size:94K ixys
ixgh60n60.pdf 

VCES = 600 V Ultra-Low VCE(sat) IGBT IXGH 60N60 IC25 = 75 A IXGK 60N60 VCE(sat) = 1.7 V IXGT 60N60 Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 IC25 TC = 25 C, limited by leads 75 A (IXGT) IC90 TC = 90 C60 A G E ICM TC = 25 C, ... See More ⇒
9.6. Size:581K ixys
ixgh60n60c2.pdf 

Advance Technical Data VCES = 600 V IXGH 60N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 60N60C2 VCE(sat) = 2.5 V tfi typ = 35 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by... See More ⇒
9.7. Size:95K ixys
ixgh60n60 ixgk60n60 ixgt60n60.pdf 

VCES = 600 V Ultra-Low VCE(sat) IGBT IXGH 60N60 IC25 = 75 A IXGK 60N60 VCE(sat) = 1.7 V IXGT 60N60 Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 IC25 TC = 25 C, limited by leads 75 A (IXGT) IC90 TC = 90 C60 A G E ICM TC = 25 C, ... See More ⇒
9.8. Size:576K ixys
ixgh60n60b2.pdf 

Advance Technical Data VCES = 600 V IXGH 60N60B2 HiPerFASTTM IGBT IC25 = 75 A IXGT 60N60B2 VCE(sat) ... See More ⇒
9.9. Size:38K ixys
ixgh60n30c3.pdf 

Advance Technical Information VCES = 300V IXGH60N30C3 GenX3TM 300V IGBT IC110 = 60A VCE(sat) 1.8V High Speed IGBTs for tfi typ = 70ns 50-150kHz switching TO-247 AD Symbol Test Conditions Maximum Ratings (IXGH) VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C, RGE = 1M 300 V G VGES Continuous 20 V C (TAB) E VGEM Transient 30 V IC2... See More ⇒
9.10. Size:192K ixys
ixgh64n60a3.pdf 

Preliminary Technical Information IXGH64N60A3 VCES = 600V GenX3TM 600V IGBT IXGT64N60A3 IC110 = 64A Ultra-lowVsat PT IGBTs for up to VCE(sat) 1.35V 5 kHz switching Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G C (TAB) C IC11... See More ⇒
9.12. Size:163K ixys
ixgh64n60b3.pdf 

Preliminary Technical Information IXGH64N60B3 VCES = 600V GenX3TM 600V IGBT IXGT64N60B3 IC110 = 64A Medium speed low Vsat PT VCE(sat) 1.8V IGBTs for 5 - 40kHz switching tfi(typ) = 88ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 ... See More ⇒
Specs: IXGH60N30C3, IXGH60N60B2, IXGH60N60C2, IXGH60N60C3, IXGH60N60C3D1, IXGH64N60A3, IXGH64N60B3, IXGH6N170, IRG4PC50W, IXGH72N60A3, IXGH72N60B3, IXGH72N60C3, IXGH85N30C3, IXGH90N60B3, IXGI48N60C3, IXGJ40N60C2D1, IXGJ50N60B
Keywords - IXGH6N170A transistor spec
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