IXGI48N60C3 Specs and Replacement

Type Designator: IXGI48N60C3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃

tr ⓘ - Rise Time, typ: 26 nS

Coesⓘ - Output Capacitance, typ: 207 pF

Package: TO263

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IXGI48N60C3 datasheet

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IXGI48N60C3

GenX3TM 600V IGBTs IXGI48N60C3 VCES = 600V IXGA48N60C3 IC110 = 48A IXGP48N60C3 2.5V High-Speed PT IGBTs for VCE(sat) 40-100kHz Switching IXGH48N60C3 tfi(typ) = 38ns Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V Features VGES Continuous 20 V Optimized for Low Switching Losses VGEM Tra... See More ⇒

Specs: IXGH64N60B3, IXGH6N170, IXGH6N170A, IXGH72N60A3, IXGH72N60B3, IXGH72N60C3, IXGH85N30C3, IXGH90N60B3, NGTB75N65FL2, IXGJ40N60C2D1, IXGJ50N60B, IXGJ50N60C4D1, IXGK100N170, IXGK120N120A3, IXGK120N120B3, IXGK120N60A3, IXGK120N60B3

Keywords - IXGI48N60C3 transistor spec

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