IXGK35N120B Specs and Replacement

Type Designator: IXGK35N120B

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 350 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 70 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3(max) V @25℃

tr ⓘ - Rise Time, typ: 27 nS

Coesⓘ - Output Capacitance, typ: 260 pF

Package: TO264

 IXGK35N120B Substitution

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IXGK35N120B datasheet

 ..1. Size:45K  ixys
 ixgk35n120b.pdf pdf_icon

IXGK35N120B

Preliminary Data Sheet IXGK 35N120B VCES = 1200 V HiPerFASTTM IGBT IXGX 35N120B IC25 = 70 A IXGK 35N120BD1 VCE(sat) = 3.3 V IXGX 35N120BD1 tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G C C (TAB) VGEM Transient 30 V E IC25 TC = 25 C70 A IC9... See More ⇒

 ..2. Size:1845K  ixys
 ixgk35n120b ixgk35n120bd1 ixgx35n120b ixgx35n120bd1.pdf pdf_icon

IXGK35N120B

Preliminary Data Sheet IXGK 35N120B VCES = 1200 V HiPerFASTTM IGBT IXGX 35N120B IC25 = 70 A IXGK 35N120BD1 VCE(sat) = 3.3 V IXGX 35N120BD1 tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G C C (TAB) VGEM Transient 30 V E IC25 TC = 25 C70 A IC9... See More ⇒

 0.1. Size:45K  ixys
 ixgk35n120bd1.pdf pdf_icon

IXGK35N120B

Preliminary Data Sheet IXGK 35N120B VCES = 1200 V HiPerFASTTM IGBT IXGX 35N120B IC25 = 70 A IXGK 35N120BD1 VCE(sat) = 3.3 V IXGX 35N120BD1 tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G C C (TAB) VGEM Transient 30 V E IC25 TC = 25 C70 A IC9... See More ⇒

 4.1. Size:45K  ixys
 ixgk35n120c.pdf pdf_icon

IXGK35N120B

Preliminary Data Sheet IXGK 35N120C VCES = 1200 V HiPerFASTTM IGBT IXGX 35N120C IC25 = 70 A IXGK 35N120CD1 VCE(sat) = 4.0 V IXGX 35N120CD1 tfi(typ) = 115 ns (D1) Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G C C (TAB) VGEM Transient 30 V E IC25 TC = 25 C70 A IC9... See More ⇒

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Specs: IXGK120N120A3, IXGK120N120B3, IXGK120N60A3, IXGK120N60B3, IXGK120N60C2, IXGK28N140B3H1, IXGK320N60A3, IXGK320N60B3, IXRH40N120, IXGK35N120BD1, IXGK35N120C, IXGK35N120CD1, IXGK400N30A3, IXGK50N120C3H1, IXGK50N60A2D1, IXGK50N60B2D1, IXGK50N60C2D1

Keywords - IXGK35N120B transistor spec

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