All IGBT. IXGK35N120C Datasheet

 

IXGK35N120C Datasheet and Replacement


   Type Designator: IXGK35N120C
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 350 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 70 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 27 nS
   Coesⓘ - Output Capacitance, typ: 260 pF
   Qgⓘ - Total Gate Charge, typ: 170 nC
   Package: TO264
      - IGBT Cross-Reference

 

IXGK35N120C Datasheet (PDF)

 ..1. Size:45K  ixys
 ixgk35n120c.pdf pdf_icon

IXGK35N120C

Preliminary Data SheetIXGK 35N120C VCES = 1200 VHiPerFASTTM IGBTIXGX 35N120C IC25 = 70 AIXGK 35N120CD1 VCE(sat) = 4.0 VIXGX 35N120CD1 tfi(typ) = 115 ns(D1)Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGCC (TAB)VGEM Transient 30 VEIC25 TC = 25C70 AIC9

 0.1. Size:45K  ixys
 ixgk35n120cd1.pdf pdf_icon

IXGK35N120C

Preliminary Data SheetIXGK 35N120C VCES = 1200 VHiPerFASTTM IGBTIXGX 35N120C IC25 = 70 AIXGK 35N120CD1 VCE(sat) = 4.0 VIXGX 35N120CD1 tfi(typ) = 115 ns(D1)Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGCC (TAB)VGEM Transient 30 VEIC25 TC = 25C70 AIC9

 4.1. Size:45K  ixys
 ixgk35n120b.pdf pdf_icon

IXGK35N120C

Preliminary Data SheetIXGK 35N120B VCES = 1200 VHiPerFASTTM IGBTIXGX 35N120B IC25 = 70 AIXGK 35N120BD1 VCE(sat) = 3.3 VIXGX 35N120BD1 tfi(typ) = 160 ns(D1)Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGCC (TAB)VGEM Transient 30 VEIC25 TC = 25C70 AIC9

 4.2. Size:1845K  ixys
 ixgk35n120b ixgk35n120bd1 ixgx35n120b ixgx35n120bd1.pdf pdf_icon

IXGK35N120C

Preliminary Data SheetIXGK 35N120B VCES = 1200 VHiPerFASTTM IGBTIXGX 35N120B IC25 = 70 AIXGK 35N120BD1 VCE(sat) = 3.3 VIXGX 35N120BD1 tfi(typ) = 160 ns(D1)Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGCC (TAB)VGEM Transient 30 VEIC25 TC = 25C70 AIC9

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Datasheet: IXGK120N60A3 , IXGK120N60B3 , IXGK120N60C2 , IXGK28N140B3H1 , IXGK320N60A3 , IXGK320N60B3 , IXGK35N120B , IXGK35N120BD1 , IRG4PH50UD , IXGK35N120CD1 , IXGK400N30A3 , IXGK50N120C3H1 , IXGK50N60A2D1 , IXGK50N60B2D1 , IXGK50N60C2D1 , IXGK50N90B2D1 , IXGK55N120A3H1 .

History: MGW12N120 | IXGT24N60C | RGTH60TS65 | IXGJ50N60C4D1 | RGTH60TS65D | SGL50N60RUFD | MGP4N60ED

Keywords - IXGK35N120C transistor datasheet

 IXGK35N120C cross reference
 IXGK35N120C equivalent finder
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 IXGK35N120C replacement

 

 
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