All IGBT. IXGK50N90B2D1 Datasheet

 

IXGK50N90B2D1 Datasheet and Replacement


   Type Designator: IXGK50N90B2D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 400 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 28 nS
   Coesⓘ - Output Capacitance, typ: 205 pF
   Qgⓘ - Total Gate Charge, typ: 135 nC
   Package: TO264
      - IGBT Cross-Reference

 

IXGK50N90B2D1 Datasheet (PDF)

 ..1. Size:198K  ixys
ixgk50n90b2d1.pdf pdf_icon

IXGK50N90B2D1

IXGH 50N90B2D1 VCES = 900 VHiPerFASTTMIXGK 50N90B2D1 IC25 = 75 AIGBT with FastIXGX 50N90B2D1 VCE(sat) = 2.7 VDiodetfi typ = 200 nsB2-Class High Speed IGBTwith Fast DiodePreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGCVGEM Transien

 ..2. Size:203K  ixys
ixgh50n90b2d1 ixgk50n90b2d1 ixgx50n90b2d1.pdf pdf_icon

IXGK50N90B2D1

IXGH 50N90B2D1 VCES = 900 VHiPerFASTTMIXGK 50N90B2D1 IC25 = 75 AIGBT with FastIXGX 50N90B2D1 VCE(sat) = 2.7 VDiodetfi typ = 200 nsB2-Class High Speed IGBTwith Fast DiodePreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGCVGEM Transien

 7.1. Size:217K  ixys
ixgk50n120c3h1.pdf pdf_icon

IXGK50N90B2D1

Preliminary Technical InformationVCES = 1200VGenX3TM 1200V IXGK50N120C3H1IC100 = 50AIGBTs w/ Diode IXGX50N120C3H1VCE(sat) 4.2Vtfi(typ) = 64nsHigh-Speed PT IGBTsfor 20 - 50 kHz SwitchingTO-264 (IXGK)GSymbol Test Conditions Maximum RatingsCEVCES TJ = 25C to 150C 1200 VTabVCGR TJ = 25C to 150C, RGE = 1M 1200 VPLUS247 (IXGX)V

 7.2. Size:628K  ixys
ixgk50n60c2d1 ixgx50n60c2d1.pdf pdf_icon

IXGK50N90B2D1

IXGK50N60C2D1 VCES = 600 VHiPerFASTTMIXGX 50N60C2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.5 VC2-Class High Speed IGBTstfi(typ) = 48 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-264 AA(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCEVGES Continuous 20 VVGEM Transient 30 VPLUS247IC25 TC = 25

Datasheet: IXGK35N120BD1 , IXGK35N120C , IXGK35N120CD1 , IXGK400N30A3 , IXGK50N120C3H1 , IXGK50N60A2D1 , IXGK50N60B2D1 , IXGK50N60C2D1 , RJH60F7BDPQ-A0 , IXGK55N120A3H1 , IXGK60N60B2D1 , IXGK60N60C2D1 , IXGK64N60B3D1 , IXGK72N60A3H1 , IXGK72N60B3H1 , IXGK75N250 , IXGK82N120A3 .

History: 2MBI100UA-120 | SKM150GB12T4

Keywords - IXGK50N90B2D1 transistor datasheet

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