All IGBT. IXGK64N60B3D1 Datasheet

 

IXGK64N60B3D1 Datasheet and Replacement


   Type Designator: IXGK64N60B3D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 460 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 64(110°C) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.59 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 41 nS
   Coesⓘ - Output Capacitance, typ: 260 pF
   Qg ⓘ - Total Gate Charge, typ: 168 nC
   Package: TO264
 

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IXGK64N60B3D1 Datasheet (PDF)

 ..1. Size:180K  ixys
 ixgk64n60b3d1.pdf pdf_icon

IXGK64N60B3D1

VCES = 600VGenX3TM 600V IGBTIXGK64N60B3D1IC110 = 64Awith DiodeIXGX64N60B3D1VCE(sat) 1.8VMedium speed low Vsat PT tfi(typ) = 88nsIGBTs 5-40 kHz switchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 V C (TAB)EVGEM Transient 30 VIC110

 9.1. Size:622K  ixys
 ixgk60n60b2d1 ixgx60n60b2d1.pdf pdf_icon

IXGK64N60B3D1

Advance Technical DataIXGK60N60B2D1 VCES = 600 VHiPerFASTTMIXGX 60N60B2D1IC25 = 75 AIGBT with DiodeVCE(sat)

 9.2. Size:188K  ixys
 ixgk60n60c2d1.pdf pdf_icon

IXGK64N60B3D1

IXGK 60N60C2D1VCES = 600 VHiPerFASTTMIXGX 60N60C2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.5 VC2-Class High Speed IGBTstfi(typ) = 35 nsSymbol Test Conditions Maximum Ratings TO-264 AA(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCVGES Continuous 20 VEVGEM Transient 30 VPLUS247IC25 TC = 25C (limited by leads)

 9.3. Size:95K  ixys
 ixgh60n60 ixgk60n60 ixgt60n60.pdf pdf_icon

IXGK64N60B3D1

VCES = 600 VUltra-Low VCE(sat) IGBT IXGH 60N60IC25 = 75 AIXGK 60N60 VCE(sat) = 1.7 VIXGT 60N60Symbol Test Conditions Maximum RatingsTO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268IC25 TC = 25C, limited by leads 75 A(IXGT)IC90 TC = 90C60 AGEICM TC = 25C,

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Datasheet: IXGK50N120C3H1 , IXGK50N60A2D1 , IXGK50N60B2D1 , IXGK50N60C2D1 , IXGK50N90B2D1 , IXGK55N120A3H1 , IXGK60N60B2D1 , IXGK60N60C2D1 , BT60T60ANFK , IXGK72N60A3H1 , IXGK72N60B3H1 , IXGK75N250 , IXGK82N120A3 , IXGK82N120B3 , IXGL200N60B3 , IXGL75N250 , IXGN100N170 .

History: AP40G120W | IRGP4062D-EPBF | APTGS75X170E3 | F3L150R12W2H3-B11

Keywords - IXGK64N60B3D1 transistor datasheet

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