IXGP30N60B2 IGBT. Datasheet pdf. Equivalent
Type Designator: IXGP30N60B2
Type: IGBT
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 190
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 70
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8(max)
Maximum G-E Threshold Voltag |VGE(th)|, V: 5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 15
Collector Capacity (Cc), typ, pF: 115
Total Gate Charge (Qg), typ, nC: 66
Package: TO220
IXGP30N60B2 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXGP30N60B2 Datasheet (PDF)
ixgp30n60b2.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Advance Technical DataVCES = 600 VIXGP 30N60B2HiPerFASTTM IGBTIC25 = 70 AVCE(sat)
ixgp30n60b4d1.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Preliminary Technical InformationVCES = 600VHigh-Gain IGBT IXGP30N60B4D1IC110 = 30Aw/ Diode VCE(sat) 1.7V tfi(typ) = 88nsHigh-Speed PT Trench IGBTTO-220Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VCTabEVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 V G = Gate C = Collector
ixgp30n60c3.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
GenX3TM 600V VCES = 600V IXGA30N60C3 IGBTs IC110 = 30A IXGP30N60C3 VCE(sat) 3.0V IXGH30N60C3 tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M 600 V TO-220AB (IXGP) VGES Continuous 20 V
ixgp30n60c3d4.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3D4 w/ Diode IC110 = 30A IXGP30N60C3D4 VCE(sat) 3.0V tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G E VCES TC = 25C to 150C 600 V C (Tab) VCGR TJ = 25C to 150C, RGE = 1M 600 V TO-220AB (IXGP) VGES Continuous 20 V
ixgp30n60c2.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
VCES = 600 VIXGP 30N60C2HiPerFASTTM IGBTIC25 = 70 AC2- Class High Speed IGBTsVCE(sat) = 2.7 Vtfi typ = 32 nsSymbol Test Conditions Maximum Ratings TO-220 (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VC (TAB)VGEM Transient 30 V GCEIC25 TC = 25C (limited by leads) 70 AIC110 TC = 110C30 AG = Gate, C =
ixgp30n60c3c1.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3C1 w/ SiC Anti-Parallel IC110 = 30A IXGP30N60C3C1 Diode VCE(sat) 3.0V IXGH30N60C3C1 tfi(typ) = 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TC = 25C to 150C 600 V VCGR TJ = 25C to 150C, RG
Datasheet: IXGP20N120B3 , IXGP24N120C3 , IXGP24N60C , IXGP24N60C4 , IXGP24N60C4D1 , IXGP2N100 , IXGP2N100A , IXGP30N120B3 , FGPF4633 , IXGP30N60B4D1 , IXGP30N60C2 , IXGP30N60C3 , IXGP30N60C3C1 , IXGP30N60C3D4 , IXGP36N60A3 , IXGP42N30C3 , IXGP48N60A3 .
History: JNG30T60PS
History: JNG30T60PS
![IXGP30N60B2](https://alltransistors.com/images/us.png)
![IXGP30N60B2](https://alltransistors.com/images/es.png)
![IXGP30N60B2](https://alltransistors.com/images/ru.png)
LIST
Last Update
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ