All IGBT. IXGP30N60B4D1 Datasheet

 

IXGP30N60B4D1 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXGP30N60B4D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 190 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 56 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 34 nS
   Coesⓘ - Output Capacitance, typ: 70 pF
   Qgⓘ - Total Gate Charge, typ: 77 nC
   Package: TO220

 IXGP30N60B4D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGP30N60B4D1 Datasheet (PDF)

 ..1. Size:85K  ixys
 ixgp30n60b4d1.pdf

IXGP30N60B4D1 IXGP30N60B4D1

Preliminary Technical InformationVCES = 600VHigh-Gain IGBT IXGP30N60B4D1IC110 = 30Aw/ Diode VCE(sat) 1.7V tfi(typ) = 88nsHigh-Speed PT Trench IGBTTO-220Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VCTabEVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 V G = Gate C = Collector

 4.1. Size:546K  ixys
 ixgp30n60b2.pdf

IXGP30N60B4D1 IXGP30N60B4D1

Advance Technical DataVCES = 600 VIXGP 30N60B2HiPerFASTTM IGBTIC25 = 70 AVCE(sat)

 5.1. Size:269K  ixys
 ixgp30n60c3.pdf

IXGP30N60B4D1 IXGP30N60B4D1

GenX3TM 600V VCES = 600V IXGA30N60C3 IGBTs IC110 = 30A IXGP30N60C3 VCE(sat) 3.0V IXGH30N60C3 tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M 600 V TO-220AB (IXGP) VGES Continuous 20 V

 5.2. Size:287K  ixys
 ixgp30n60c3d4.pdf

IXGP30N60B4D1 IXGP30N60B4D1

GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3D4 w/ Diode IC110 = 30A IXGP30N60C3D4 VCE(sat) 3.0V tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G E VCES TC = 25C to 150C 600 V C (Tab) VCGR TJ = 25C to 150C, RGE = 1M 600 V TO-220AB (IXGP) VGES Continuous 20 V

 5.3. Size:551K  ixys
 ixgp30n60c2.pdf

IXGP30N60B4D1 IXGP30N60B4D1

VCES = 600 VIXGP 30N60C2HiPerFASTTM IGBTIC25 = 70 AC2- Class High Speed IGBTsVCE(sat) = 2.7 Vtfi typ = 32 nsSymbol Test Conditions Maximum Ratings TO-220 (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VC (TAB)VGEM Transient 30 V GCEIC25 TC = 25C (limited by leads) 70 AIC110 TC = 110C30 AG = Gate, C =

 5.4. Size:278K  ixys
 ixgp30n60c3c1.pdf

IXGP30N60B4D1 IXGP30N60B4D1

GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3C1 w/ SiC Anti-Parallel IC110 = 30A IXGP30N60C3C1 Diode VCE(sat) 3.0V IXGH30N60C3C1 tfi(typ) = 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TC = 25C to 150C 600 V VCGR TJ = 25C to 150C, RG

Datasheet: IXGP24N120C3 , IXGP24N60C , IXGP24N60C4 , IXGP24N60C4D1 , IXGP2N100 , IXGP2N100A , IXGP30N120B3 , IXGP30N60B2 , IHW40T60 , IXGP30N60C2 , IXGP30N60C3 , IXGP30N60C3C1 , IXGP30N60C3D4 , IXGP36N60A3 , IXGP42N30C3 , IXGP48N60A3 , IXGP48N60B3 .

 

 
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