IXGP30N60C3 Specs and Replacement

Type Designator: IXGP30N60C3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 220 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.6 V @25℃

tr ⓘ - Rise Time, typ: 26 nS

Coesⓘ - Output Capacitance, typ: 78 pF

Package: TO220

 IXGP30N60C3 Substitution

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IXGP30N60C3 datasheet

 ..1. Size:269K  ixys
ixgp30n60c3.pdf pdf_icon

IXGP30N60C3

GenX3TM 600V VCES = 600V IXGA30N60C3 IGBTs IC110 = 30A IXGP30N60C3 VCE(sat) 3.0V IXGH30N60C3 tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V TO-220AB (IXGP) VGES Continuous 20 V ... See More ⇒

 0.1. Size:287K  ixys
ixgp30n60c3d4.pdf pdf_icon

IXGP30N60C3

GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3D4 w/ Diode IC110 = 30A IXGP30N60C3D4 VCE(sat) 3.0V tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G E VCES TC = 25 C to 150 C 600 V C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V TO-220AB (IXGP) VGES Continuous 20 V ... See More ⇒

 0.2. Size:278K  ixys
ixgp30n60c3c1.pdf pdf_icon

IXGP30N60C3

GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3C1 w/ SiC Anti-Parallel IC110 = 30A IXGP30N60C3C1 Diode VCE(sat) 3.0V IXGH30N60C3C1 tfi(typ) = 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RG... See More ⇒

 4.1. Size:551K  ixys
ixgp30n60c2.pdf pdf_icon

IXGP30N60C3

VCES = 600 V IXGP 30N60C2 HiPerFASTTM IGBT IC25 = 70 A C2- Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 32 ns Symbol Test Conditions Maximum Ratings TO-220 (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V C (TAB) VGEM Transient 30 V G C E IC25 TC = 25 C (limited by leads) 70 A IC110 TC = 110 C30 A G = Gate, C =... See More ⇒

Specs: IXGP24N60C4, IXGP24N60C4D1, IXGP2N100, IXGP2N100A, IXGP30N120B3, IXGP30N60B2, IXGP30N60B4D1, IXGP30N60C2, CRG15T120BNR3S, IXGP30N60C3C1, IXGP30N60C3D4, IXGP36N60A3, IXGP42N30C3, IXGP48N60A3, IXGP48N60B3, IXGP48N60C3, IXGP4N100

Keywords - IXGP30N60C3 transistor spec

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