IXGP42N30C3 Specs and Replacement

Type Designator: IXGP42N30C3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 223 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 300 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 42(110°C) A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.54 V @25℃

tr ⓘ - Rise Time, typ: 23 nS

Coesⓘ - Output Capacitance, typ: 218 pF

Package: TO220

 IXGP42N30C3 Substitution

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IXGP42N30C3 datasheet

 ..1. Size:173K  ixys
ixgp42n30c3.pdf pdf_icon

IXGP42N30C3

VCES = 300V IXGA42N30C3 GenX3TM 300V IGBT IC110 = 42A IXGH42N30C3 VCE(sat) 1.85V High Speed PT IGBTs for IXGP42N30C3 50-150kHz switching tfi typ = 65ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 300 V G VCGR TJ = 25 C to 150 C, RGE = 1M 300 V E C (TAB) VGES Continuous 20 V TO-247 (IXGH) VGEM Transient 30 V... See More ⇒

 9.1. Size:223K  ixys
ixga48n60c3-ixgh48n60c3-ixgp48n60c3.pdf pdf_icon

IXGP42N30C3

IXGA48N60C3 VCES = 600V GenX3TM 600V IGBT IXGH48N60C3 IC110 = 48A IXGP48N60C3 VCE(sat) 2.5V High Speed PT IGBTs for tfi(typ) = 38ns 40-100kHz switching TO-263 (IXGA) Symbol Test Conditions Maximum Ratings G VCES TC = 25 C to 150 C 600 V E (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V TO-247 (IXGH) VGES Continuous 20 V VGEM Transient 30 V I... See More ⇒

 9.2. Size:221K  ixys
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IXGP42N30C3

IXGA48N60B3 VCES = 600V GenX3TM 600V IGBT IXGP48N60B3 IC110 = 48A IXGH48N60B3 VCE(sat) 1.8V Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-263 (IXGA) Symbol Test Conditions Maximum Ratings G E VCES TC = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V TO-220 (IXGP) VGES Continuous 20 V VGEM Transient 30 V IC110 TC = 1... See More ⇒

 9.3. Size:240K  ixys
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IXGP42N30C3

GenX3TM 600V IGBTs IXGI48N60C3 VCES = 600V IXGA48N60C3 IC110 = 48A IXGP48N60C3 2.5V High-Speed PT IGBTs for VCE(sat) 40-100kHz Switching IXGH48N60C3 tfi(typ) = 38ns Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V Features VGES Continuous 20 V Optimized for Low Switching Losses VGEM Tra... See More ⇒

Specs: IXGP30N120B3, IXGP30N60B2, IXGP30N60B4D1, IXGP30N60C2, IXGP30N60C3, IXGP30N60C3C1, IXGP30N60C3D4, IXGP36N60A3, JT075N065WED, IXGP48N60A3, IXGP48N60B3, IXGP48N60C3, IXGP4N100, IXGP50N60B4, IXGP50N60C4, IXGP7N60BD1, IXGP7N60CD1

Keywords - IXGP42N30C3 transistor spec

 IXGP42N30C3 cross reference
 IXGP42N30C3 equivalent finder
 IXGP42N30C3 lookup
 IXGP42N30C3 substitution
 IXGP42N30C3 replacement