All IGBT. IXGQ50N60C4D1 Datasheet

 

IXGQ50N60C4D1 IGBT. Datasheet pdf. Equivalent

Type Designator: IXGQ50N60C4D1

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.5V

Maximum Collector Current |Ic|, A: 90A

Rise Time, nS: 63

Package: TO3P

IXGQ50N60C4D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXGQ50N60C4D1 PDF doc:

1.1. ixgq50n60c4d1.pdf Size:196K _igbt_a

IXGQ50N60C4D1
IXGQ50N60C4D1

VCES = 600V High-Gain IGBTs IXGQ50N60C4D1 IC110 = 46A w/ Diode IXGH50N60C4D1 ≤ ≤ VCE(sat) ≤ 2.3V ≤ ≤ High-Speed PT Trench IGBTs TO-3P (IXGQ) G C E Symbol Test Conditions Maximum Ratings Tab VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V TO-247 (IXGH) VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 90 A IC110 TC = 110

1.2. ixgq50n60b4d1.pdf Size:198K _igbt_a

IXGQ50N60C4D1
IXGQ50N60C4D1

VCES = 600V High-Gain IGBTs IXGH50N60B4D1 IC110 = 50A w/Diode IXGQ50N60B4D1 ≤ ≤ VCE(sat) ≤ 1.8V ≤ ≤ Low-Vsat PT Trench IGBTs TO-247 (IXGH) G C Tab E Symbol Test Conditions Maximum Ratings TO-3P (IXGQ) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V G VGEM Transient ±30 V C E IC25 TC = 25°C 100 A Tab IC

Datasheet: IXGP4N100 , IXGP50N60B4 , IXGP50N60C4 , IXGP7N60BD1 , IXGP7N60CD1 , IXGQ20N120B , IXGQ50N60B4D1 , IXGQ50N60B4D1 , STGB10NB37LZ , IXGR120N60B , IXGR120N60C2 , IXGR12N60C , IXGR16N170AH1 , IXGR24N120C3D1 , IXGR24N60C , IXGR32N170AH1 , IXGR32N170H1 .

 


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