IXGR24N60C IGBT. Datasheet pdf. Equivalent
Type Designator: IXGR24N60C
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 80 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 42 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 25 nS
Coesⓘ - Output Capacitance, typ: 120 pF
Qgⓘ - Total Gate Charge, typ: 55 nC
Package: ISOPLUS247
IXGR24N60C Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXGR24N60C Datasheet (PDF)
ixgr24n60c.pdf
VCES = 600 VIXGR 24N60CHiPerFASTTM IGBTIC25 = 42 AISOPLUS247TMVCE(sat) = 2.5 V(Electrically Isolated Back Surface)tfi(typ) = 60 nsPreliminary data sheetSymbol Test Conditions Maximum RatingsISOPLUS 247E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCE Isolated Backside*IC25 TC =
ixgr24n120c3d1.pdf
Preliminary Technical InformationVCES = 1200VGenX3TM 1200V IGBT IXGR24N120C3D1IC25 = 48AVCE(sat) 4.2VHigh speed PT IGBTs fortfi(typ) = 110ns20-50kHz SwitchingISOPLUS 247TM (IXGR)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VGCIC25
Datasheet: SL75T120FZ , IXGQ50N60B4D1 , IXGQ50N60C4D1 , IXGR120N60B , IXGR120N60C2 , IXGR12N60C , IXGR16N170AH1 , IXGR24N120C3D1 , STGB10NB37LZ , IXGR32N170AH1 , IXGR32N170H1 , IXGR32N90B2D1 , IXGR35N120B , IXGR35N120BD1 , IXGR35N120C , IXGR39N60B , IXGR39N60BD1 .
LIST
Last Update
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2