IXGR35N120BD1 IGBT. Datasheet pdf. Equivalent

   Type Designator: IXGR35N120BD1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 54 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 50 nS
   Coesⓘ - Output Capacitance, typ: 190 pF
   Package: ISOPLUS247

IXGR35N120BD1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXGR35N120BD1 Datasheet (PDF)

..1. Size:517K ixys
ixgr35n120bd1.pdf

Advanced Technical InformationIXGR 35N120BD1High Voltage IGBTVCES = 1200 Vwith DiodeIC25 = 54 A(Electrically Isolated Back Surface)VCE(sat) = 3.5 Vtfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 V(TAB)VGEM Transient 30 V GCEIC25 TC = 25

3.1. Size:49K ixys
ixgr35n120b ixgr35n120c.pdf

VCES IC25 VCE(sat) tfi(typ)HiPerFASTTM IGBTIXGR 35N120B 1200 V 70 A 3.3 V 160 nsISOPLUS247TM1200 V 70 A 4.0 V 115 nsIXGR 35N120C(Electrically Isolated Backside)Symbol Test Conditions Maximum Ratings ISOPLUS 247E153432VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGVGEM Transient 30 VCE Isolated Backside*IC25

3.2. Size:47K ixys
ixgr35n120b.pdf