All IGBT. IXGR48N60C3D1 Datasheet

 

IXGR48N60C3D1 Datasheet and Replacement


   Type Designator: IXGR48N60C3D1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 125 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 56 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 26 nS
   Coesⓘ - Output Capacitance, typ: 220 pF
   Package: ISOPLUS247
      - IGBT Cross-Reference

 

IXGR48N60C3D1 Datasheet (PDF)

 ..1. Size:205K  ixys
 ixgr48n60c3d1.pdf pdf_icon

IXGR48N60C3D1

GenX3TM 600V IGBT VCES = 600VIXGR48N60C3D1with Diode IC25 = 56AVCE(sat) 2.7V(Electrically Isolated Back Surface)tfi(typ) = 38nsHigh Speed PT IGBTs for40-100kHz SwitchingSymbol Test Conditions Maximum RatingsISOPLUS 247TMVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGCIC

 5.1. Size:96K  ixys
 ixgr48n60b3d1.pdf pdf_icon

IXGR48N60C3D1

Preliminary Technical InformationVCES = 600VGenX3TM 600V IGBTsIXGR48N60B3IC25 = 60A IXGR48N60B3D1(Electrically Isolated BackVCE(sat) 2.1VSurface)tfi(typ) = 116nsMedium-Speed Low-Vsat PTIGBTs 5-40 kHz SwitchingISOPLUS247TM IXGR_B3 IXGR_B3D1E153432Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150

 5.2. Size:96K  ixys
 ixgr48n60b3.pdf pdf_icon

IXGR48N60C3D1

Preliminary Technical InformationVCES = 600VGenX3TM 600V IGBTsIXGR48N60B3IC25 = 60A IXGR48N60B3D1(Electrically Isolated BackVCE(sat) 2.1VSurface)tfi(typ) = 116nsMedium-Speed Low-Vsat PTIGBTs 5-40 kHz SwitchingISOPLUS247TM IXGR_B3 IXGR_B3D1E153432Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150

 9.1. Size:53K  ixys
 ixgr40n60b.pdf pdf_icon

IXGR48N60C3D1

VCES = 600 VIXGR 40N60BHiPerFASTTM IGBTIC25 = 70 AIXGR 40N60BD1ISOPLUS247TMVCE(sat) = 2.1 V(Electrically Isolated Backside)tfi(typ) = 180 ns(D1)Symbol Test Conditions Maximum RatingsISOPLUS 247VCES TJ = 25C to 150C 600 VE153432VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGIC25 TC = 25C 70 A CE Isolated Backsi

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Datasheet: IXGR40N60B2 , IXGR40N60B2D1 , IXGR40N60C , IXGR40N60C2 , IXGR40N60C2D1 , IXGR40N60CD1 , IXGR48N60B3 , IXGR48N60B3D1 , BT15T120ANF , IXGR50N160H1 , IXGR50N60A2U1 , IXGR50N60B , IXGR50N60B2 , IXGR50N60B2D1 , IXGR50N60BD1 , IXGR50N60C2 , IXGR50N60C2D1 .

History: NCE30TD60BD | IXST35N120B | STGFW30H65FB | MSG100D350FHS | MMG50HD120XT6TC | MSG20T65HPT1 | MSG40T120FQC

Keywords - IXGR48N60C3D1 transistor datasheet

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