IXGR50N160H1 Specs and Replacement
Type Designator: IXGR50N160H1
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 240 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 75 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
tr ⓘ - Rise Time, typ: 111 nS
Coesⓘ - Output Capacitance, typ: 257 pF
Package: ISOPLUS247
IXGR50N160H1 Substitution - IGBTⓘ Cross-Reference Search
IXGR50N160H1 datasheet
ixgr50n160h1.pdf
Advance Technical Information High Voltage IGBT VCES = 1600V IXGR50N160H1 with Diode IC110 = 36A VCE(sat) 2.30V ( Electrically Isolated Tab) ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1600 V VCGR TJ = 25 C to 150 C, RGE = 1M 1600 V G VGES Continuous 20 V C E Isolated Tab VGEM Transient 30 V IC25 TC = 25 C, Lead... See More ⇒
ixgr50n60b2.pdf
IXGR 50N60B2 VCES = 600 V HiPerFASTTM IGBT IXGR 50N60B2D1 IC25 = 68 A ISOPLUS247TM VCE(sat) = 2.2 V B2-Class High Speed IGBTs tfi(typ) = 65 ns (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_B2 IXGR_B2D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25 C to 150 C 600 V (IXGR) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G (ISOLATED TAB) VGES C... See More ⇒
ixgr50n60c2.pdf
IXGR 50N60C2 VCES = 600 V HiPerFASTTM IXGR 50N60C2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi(typ) = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25 C to 150 C 600 V (IXGR) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V (ISOLATED TAB) VGEM Transient 30 V IC25 TC = 25 C75 A ... See More ⇒
ixgr50n90b2d1.pdf
IXGR 50N90B2D1 VCES = 900 V HiPerFASTTM IC25 = 40 A IXGR 50N90B2D1 IGBT with Fast VCE(sat) = 2.9 V Diode tfi typ = 200 ns B2-Class High Speed IGBT with Fast Diode (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 M 900 V VGES Continuous 20 V VGEM Transient... See More ⇒
Specs: IXGR40N60B2D1, IXGR40N60C, IXGR40N60C2, IXGR40N60C2D1, IXGR40N60CD1, IXGR48N60B3, IXGR48N60B3D1, IXGR48N60C3D1, XNF15N60T, IXGR50N60A2U1, IXGR50N60B, IXGR50N60B2, IXGR50N60B2D1, IXGR50N60BD1, IXGR50N60C2, IXGR50N60C2D1, IXGR50N90B2D1
Keywords - IXGR50N160H1 transistor spec
IXGR50N160H1 cross reference
IXGR50N160H1 equivalent finder
IXGR50N160H1 lookup
IXGR50N160H1 substitution
IXGR50N160H1 replacement
History: IXGR48N60B3D1
🌐 : EN ES РУ
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
Popular searches
mje15030 transistor equivalent | 13003b | 2n6121 | 2sc1312 | bf495 transistor equivalent | 2sc1313 | 2sb560 replacement | 2sd330 replacement









