IXGR50N160H1 Specs and Replacement

Type Designator: IXGR50N160H1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 240 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃

tr ⓘ - Rise Time, typ: 111 nS

Coesⓘ - Output Capacitance, typ: 257 pF

Package: ISOPLUS247

 IXGR50N160H1 Substitution

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IXGR50N160H1 datasheet

 ..1. Size:92K  ixys
ixgr50n160h1.pdf pdf_icon

IXGR50N160H1

Advance Technical Information High Voltage IGBT VCES = 1600V IXGR50N160H1 with Diode IC110 = 36A VCE(sat) 2.30V ( Electrically Isolated Tab) ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1600 V VCGR TJ = 25 C to 150 C, RGE = 1M 1600 V G VGES Continuous 20 V C E Isolated Tab VGEM Transient 30 V IC25 TC = 25 C, Lead... See More ⇒

 7.1. Size:514K  ixys
ixgr50n60b2.pdf pdf_icon

IXGR50N160H1

IXGR 50N60B2 VCES = 600 V HiPerFASTTM IGBT IXGR 50N60B2D1 IC25 = 68 A ISOPLUS247TM VCE(sat) = 2.2 V B2-Class High Speed IGBTs tfi(typ) = 65 ns (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_B2 IXGR_B2D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25 C to 150 C 600 V (IXGR) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G (ISOLATED TAB) VGES C... See More ⇒

 7.2. Size:506K  ixys
ixgr50n60c2.pdf pdf_icon

IXGR50N160H1

IXGR 50N60C2 VCES = 600 V HiPerFASTTM IXGR 50N60C2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi(typ) = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25 C to 150 C 600 V (IXGR) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V (ISOLATED TAB) VGEM Transient 30 V IC25 TC = 25 C75 A ... See More ⇒

 7.3. Size:215K  ixys
ixgr50n90b2d1.pdf pdf_icon

IXGR50N160H1

IXGR 50N90B2D1 VCES = 900 V HiPerFASTTM IC25 = 40 A IXGR 50N90B2D1 IGBT with Fast VCE(sat) = 2.9 V Diode tfi typ = 200 ns B2-Class High Speed IGBT with Fast Diode (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 M 900 V VGES Continuous 20 V VGEM Transient... See More ⇒

Specs: IXGR40N60B2D1, IXGR40N60C, IXGR40N60C2, IXGR40N60C2D1, IXGR40N60CD1, IXGR48N60B3, IXGR48N60B3D1, IXGR48N60C3D1, XNF15N60T, IXGR50N60A2U1, IXGR50N60B, IXGR50N60B2, IXGR50N60B2D1, IXGR50N60BD1, IXGR50N60C2, IXGR50N60C2D1, IXGR50N90B2D1

Keywords - IXGR50N160H1 transistor spec

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