All IGBT. IXGR50N60B2D1 Datasheet

 

IXGR50N60B2D1 Datasheet and Replacement


   Type Designator: IXGR50N60B2D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 68 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 25 nS
   Coesⓘ - Output Capacitance, typ: 280 pF
   Qg ⓘ - Total Gate Charge, typ: 140 nC
   Package: ISOPLUS247
 

 IXGR50N60B2D1 substitution

   - IGBT ⓘ Cross-Reference Search

 

IXGR50N60B2D1 Datasheet (PDF)

 ..1. Size:514K  ixys
 ixgr50n60b2d1.pdf pdf_icon

IXGR50N60B2D1

IXGR 50N60B2VCES = 600 VHiPerFASTTM IGBTIXGR 50N60B2D1IC25 = 68 AISOPLUS247TMVCE(sat) = 2.2 VB2-Class High Speed IGBTstfi(typ) = 65 ns(Electrically Isolated Back Surface)Preliminary Data SheetIXGR_B2 IXGR_B2D1Symbol Test Conditions Maximum RatingsISOPLUS247VCES TJ = 25C to 150C 600 V (IXGR)VCGR TJ = 25C to 150C; RGE = 1 M 600 VG(ISOLATED TAB)VGES C

 3.1. Size:514K  ixys
 ixgr50n60b2.pdf pdf_icon

IXGR50N60B2D1

IXGR 50N60B2VCES = 600 VHiPerFASTTM IGBTIXGR 50N60B2D1IC25 = 68 AISOPLUS247TMVCE(sat) = 2.2 VB2-Class High Speed IGBTstfi(typ) = 65 ns(Electrically Isolated Back Surface)Preliminary Data SheetIXGR_B2 IXGR_B2D1Symbol Test Conditions Maximum RatingsISOPLUS247VCES TJ = 25C to 150C 600 V (IXGR)VCGR TJ = 25C to 150C; RGE = 1 M 600 VG(ISOLATED TAB)VGES C

 4.1. Size:563K  ixys
 ixgr50n60bd1.pdf pdf_icon

IXGR50N60B2D1

VCES = 600 VIXGR 50N60BHiPerFASTTM IGBTIC25 = 75 AIXGR 50N60BD1ISOPLUS247TMVCE(sat) = 2.5 V(Electrically Isolated Back Surface)tfi(typ) = 85 ns(D1)Symbol Test Conditions Maximum RatingsISOPLUS 247E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCE Isolated Backside*IC25 TC = 25

 4.2. Size:563K  ixys
 ixgr50n60b.pdf pdf_icon

IXGR50N60B2D1

VCES = 600 VIXGR 50N60BHiPerFASTTM IGBTIC25 = 75 AIXGR 50N60BD1ISOPLUS247TMVCE(sat) = 2.5 V(Electrically Isolated Back Surface)tfi(typ) = 85 ns(D1)Symbol Test Conditions Maximum RatingsISOPLUS 247E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCE Isolated Backside*IC25 TC = 25

SHOW MORE

Datasheet: IXGR40N60CD1 , IXGR48N60B3 , IXGR48N60B3D1 , IXGR48N60C3D1 , IXGR50N160H1 , IXGR50N60A2U1 , IXGR50N60B , IXGR50N60B2 , IRG4PC50W , IXGR50N60BD1 , IXGR50N60C2 , IXGR50N60C2D1 , IXGR50N90B2D1 , IXGR55N120A3H1 , IXGR60N60B2 , IXGR60N60B2D1 , IXGR60N60C2 .

Keywords - IXGR50N60B2D1 transistor datasheet

 IXGR50N60B2D1 cross reference
 IXGR50N60B2D1 equivalent finder
 IXGR50N60B2D1 lookup
 IXGR50N60B2D1 substitution
 IXGR50N60B2D1 replacement

 

 
Back to Top

 


 
.