All IGBT. IXGR50N60C2D1 Datasheet

 

IXGR50N60C2D1 Datasheet and Replacement


   Type Designator: IXGR50N60C2D1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7(max) V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 25 nS
   Coesⓘ - Output Capacitance, typ: 290 pF
   Package: ISOPLUS247
      - IGBT Cross-Reference

 

IXGR50N60C2D1 Datasheet (PDF)

 ..1. Size:506K  ixys
 ixgr50n60c2d1.pdf pdf_icon

IXGR50N60C2D1

IXGR 50N60C2VCES = 600 VHiPerFASTTMIXGR 50N60C2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.7 VC2-Class High Speed IGBTstfi(typ) = 48 nsPreliminary Data SheetSymbol Test Conditions Maximum RatingsISOPLUS247VCES TJ = 25C to 150C 600 V(IXGR)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 V(ISOLATED TAB)VGEM Transient 30 VIC25 TC = 25C75 A

 3.1. Size:506K  ixys
 ixgr50n60c2.pdf pdf_icon

IXGR50N60C2D1

IXGR 50N60C2VCES = 600 VHiPerFASTTMIXGR 50N60C2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.7 VC2-Class High Speed IGBTstfi(typ) = 48 nsPreliminary Data SheetSymbol Test Conditions Maximum RatingsISOPLUS247VCES TJ = 25C to 150C 600 V(IXGR)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 V(ISOLATED TAB)VGEM Transient 30 VIC25 TC = 25C75 A

 5.1. Size:514K  ixys
 ixgr50n60b2.pdf pdf_icon

IXGR50N60C2D1

IXGR 50N60B2VCES = 600 VHiPerFASTTM IGBTIXGR 50N60B2D1IC25 = 68 AISOPLUS247TMVCE(sat) = 2.2 VB2-Class High Speed IGBTstfi(typ) = 65 ns(Electrically Isolated Back Surface)Preliminary Data SheetIXGR_B2 IXGR_B2D1Symbol Test Conditions Maximum RatingsISOPLUS247VCES TJ = 25C to 150C 600 V (IXGR)VCGR TJ = 25C to 150C; RGE = 1 M 600 VG(ISOLATED TAB)VGES C

 5.2. Size:563K  ixys
 ixgr50n60bd1.pdf pdf_icon

IXGR50N60C2D1

VCES = 600 VIXGR 50N60BHiPerFASTTM IGBTIC25 = 75 AIXGR 50N60BD1ISOPLUS247TMVCE(sat) = 2.5 V(Electrically Isolated Back Surface)tfi(typ) = 85 ns(D1)Symbol Test Conditions Maximum RatingsISOPLUS 247E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCE Isolated Backside*IC25 TC = 25

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Datasheet: IXGR48N60C3D1 , IXGR50N160H1 , IXGR50N60A2U1 , IXGR50N60B , IXGR50N60B2 , IXGR50N60B2D1 , IXGR50N60BD1 , IXGR50N60C2 , RJH60F7BDPQ-A0 , IXGR50N90B2D1 , IXGR55N120A3H1 , IXGR60N60B2 , IXGR60N60B2D1 , IXGR60N60C2 , IXGR60N60C2C1 , IXGR60N60C2D1 , IXGR60N60C3C1 .

History: VS-GT140DA60U | IXGH35N120B | RJP60V0DPM | MG300N1US1 | GT10G101 | IXXK100N60C3H1 | AOKS40B65H2AL

Keywords - IXGR50N60C2D1 transistor datasheet

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