IXGR60N60C3C1 Specs and Replacement

Type Designator: IXGR60N60C3C1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 170 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Coesⓘ - Output Capacitance, typ: 210 pF

Package: ISOPLUS247

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IXGR60N60C3C1 datasheet

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IXGR60N60C3C1

GenX3TM 600V IGBT VCES = 600V IXGR60N60C3C1 w/ SiC Anti-Parallel IC110 = 30A Diode VCE(sat) 2.5V tfi(typ) = 50ns (Electrically Isolated Back Surface) High Speed PT IGBT for 40-100kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G VGES Continuous 20 V C Isolated T... See More ⇒

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IXGR60N60C3C1

TM VCES = 600V GenX3 600V IGBT IXGR60N60C3D1 IC110 = 30A w/ Diode VCE(sat) 2.5V (Electrically Isolated Back Surface) tfi(typ) = 50ns High Speed PT IGBT for 40-100 kHz Switching Symbol Test Conditions Maximum Ratings ISOPLUS247TM VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G C... See More ⇒

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IXGR60N60C3C1

IXGR 60N60C2 VCES = 600 V HiPerFASTTM IGBT IXGR 60N60C2D1 IC25 = 75 A ISOPLUS247TM VCE(sat) = 2.7 V Lightspeed 2TM Series tfi(typ) = 35 ns (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25 C to 150 C 600 V (IXGR) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (ISOLATED TAB) VGES Conti... See More ⇒

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IXGR60N60C3C1

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Specs: IXGR50N60C2D1, IXGR50N90B2D1, IXGR55N120A3H1, IXGR60N60B2, IXGR60N60B2D1, IXGR60N60C2, IXGR60N60C2C1, IXGR60N60C2D1, RJP63K2DPP-M0, IXGR60N60C3D1, IXGR64N60A3, IXGR6N170A, IXGR72N60A3, IXGR72N60A3H1, IXGR72N60B3D1, IXGR72N60B3H1, IXGR72N60C3D1

Keywords - IXGR60N60C3C1 transistor spec

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