All IGBT. IXGR6N170A Datasheet

 

IXGR6N170A Datasheet and Replacement


   Type Designator: IXGR6N170A
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 50 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 5.5 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 7(max) V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 20 pF
   Package: ISOPLUS247
      - IGBT Cross-Reference

 

IXGR6N170A Datasheet (PDF)

 ..1. Size:169K  ixys
 ixgr6n170a.pdf pdf_icon

IXGR6N170A

Advance Technical InformationHigh Voltage IGBT VCES = 1700VIXGR6N170AIC25 = 5.5A VCE(sat) 7.0V tfi(typ) = 32ns(Electrically Isolated Tab)Symbol Test Conditions Maximum RatingsISOPLUS247TMVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VVGEM Transient 30 VGIC25 TC = 25C 5.5 A CIsolated Ta

 9.1. Size:109K  ixys
 ixgr60n60u1.pdf pdf_icon

IXGR6N170A

VCES = 600 VLow VCE(sat) IGBT IXGR 60N60U1IC25 = 75 Awith DiodeVCE(sat) = 1.7 VISOPLUS247TM(Electrically Isolated Back Surface)Preliminary dataSymbol Test Conditions Maximum Ratings ISOPLUS247TMVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VVGEM Transient 30 VGCIC25 TC = 25C 75 A EIsolated back surface*IC100

 9.2. Size:505K  ixys
 ixgr60n60c2.pdf pdf_icon

IXGR6N170A

IXGR 60N60C2VCES = 600 VHiPerFASTTM IGBTIXGR 60N60C2D1IC25 = 75 AISOPLUS247TMVCE(sat) = 2.7 VLightspeed 2TM Seriestfi(typ) = 35 ns(Electrically Isolated Back Surface)Preliminary Data SheetIXGR_C2 IXGR_C2D1Symbol Test Conditions Maximum RatingsISOPLUS247VCES TJ = 25C to 150C 600 V (IXGR)VCGR TJ = 25C to 150C; RGE = 1 M 600 VC(ISOLATED TAB)VGES Conti

 9.3. Size:511K  ixys
 ixgr60n60b2d1.pdf pdf_icon

IXGR6N170A

Advance Technical DataIXGR 60N60B2VCES = 600 VHiPerFASTTM IGBTIXGR 60N60B2D1IC25 = 75 AISOPLUS247TMVCE(sat) = 2.0 VB2-Class High Speed IGBTstfi(typ) = 100 ns(Electrically Isolated Back Surface)D1Symbol Test Conditions Maximum Ratings PLUS247(IXGR) E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VC(ISOLAT

SHOW MORE

Datasheet: IXGR60N60B2 , IXGR60N60B2D1 , IXGR60N60C2 , IXGR60N60C2C1 , IXGR60N60C2D1 , IXGR60N60C3C1 , IXGR60N60C3D1 , IXGR64N60A3 , FGH40N60SFD , IXGR72N60A3 , IXGR72N60A3H1 , IXGR72N60B3D1 , IXGR72N60B3H1 , IXGR72N60C3D1 , IXGT10N170 , IXGT10N170A , IXGT15N120B2D1 .

History: DIM600DDM17-A

Keywords - IXGR6N170A transistor datasheet

 IXGR6N170A cross reference
 IXGR6N170A equivalent finder
 IXGR6N170A lookup
 IXGR6N170A substitution
 IXGR6N170A replacement

 

 
Back to Top

 


 
.