IXGR6N170A Specs and Replacement

Type Designator: IXGR6N170A

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 50 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 5.5 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 7(max) V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Coesⓘ - Output Capacitance, typ: 20 pF

Package: ISOPLUS247

 IXGR6N170A Substitution

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IXGR6N170A datasheet

 ..1. Size:169K  ixys
ixgr6n170a.pdf pdf_icon

IXGR6N170A

Advance Technical Information High Voltage IGBT VCES = 1700V IXGR6N170A IC25 = 5.5A VCE(sat) 7.0V tfi(typ) = 32ns (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings ISOPLUS247TM VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V VGEM Transient 30 V G IC25 TC = 25 C 5.5 A C Isolated Ta... See More ⇒

 9.1. Size:109K  ixys
ixgr60n60u1.pdf pdf_icon

IXGR6N170A

VCES = 600 V Low VCE(sat) IGBT IXGR 60N60U1 IC25 = 75 A with Diode VCE(sat) = 1.7 V ISOPLUS247TM (Electrically Isolated Back Surface) Preliminary data Symbol Test Conditions Maximum Ratings ISOPLUS247TM VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V VGEM Transient 30 V G C IC25 TC = 25 C 75 A E Isolated back surface* IC100 ... See More ⇒

 9.2. Size:505K  ixys
ixgr60n60c2.pdf pdf_icon

IXGR6N170A

IXGR 60N60C2 VCES = 600 V HiPerFASTTM IGBT IXGR 60N60C2D1 IC25 = 75 A ISOPLUS247TM VCE(sat) = 2.7 V Lightspeed 2TM Series tfi(typ) = 35 ns (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25 C to 150 C 600 V (IXGR) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (ISOLATED TAB) VGES Conti... See More ⇒

 9.3. Size:511K  ixys
ixgr60n60b2d1.pdf pdf_icon

IXGR6N170A

Advance Technical Data IXGR 60N60B2 VCES = 600 V HiPerFASTTM IGBT IXGR 60N60B2D1 IC25 = 75 A ISOPLUS247TM VCE(sat) = 2.0 V B2-Class High Speed IGBTs tfi(typ) = 100 ns (Electrically Isolated Back Surface) D1 Symbol Test Conditions Maximum Ratings PLUS247(IXGR) E153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V C (ISOLAT... See More ⇒

Specs: IXGR60N60B2, IXGR60N60B2D1, IXGR60N60C2, IXGR60N60C2C1, IXGR60N60C2D1, IXGR60N60C3C1, IXGR60N60C3D1, IXGR64N60A3, FGH40N60SFD, IXGR72N60A3, IXGR72N60A3H1, IXGR72N60B3D1, IXGR72N60B3H1, IXGR72N60C3D1, IXGT10N170, IXGT10N170A, IXGT15N120B2D1

Keywords - IXGR6N170A transistor spec

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