IXGT15N120B2D1 Specs and Replacement
Type Designator: IXGT15N120B2D1
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 192 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3(max) V @25℃
tr ⓘ - Rise Time, typ: 15 nS
Coesⓘ - Output Capacitance, typ: 95 pF
Package: TO268
IXGT15N120B2D1 Substitution - IGBTⓘ Cross-Reference Search
IXGT15N120B2D1 datasheet
ixgt15n120b2d1.pdf
Advance Technical Information VCES =1200 V IXGH15N120B2D1 HiPerFASTTM IGBT IC25 = 30 A IXGT15N120B2D1 VCE(sat) = 3.3 V Optimized for 10-20 KHz hard tfi(typ) = 137 ns switching and up to 100 KHz resonant switching Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25 C to 150 C 1200 V (IXGH) VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G TAB C ... See More ⇒
ixgt15n120bd1.pdf
Low VCE(sat) IGBT with Diode VDSS IC25 VCE(sat) High Speed IGBT with Diode IXGH/IXGT 15N120BD1 1200 V 30 A 3.2 V IXGH/IXGT 15N120CD1 1200 V 30 A 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247AD (IXGH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V G VGES Continuous 20 V C E TAB VGEM Transient 30 V IC25 TC = 25 C30 A TO-2... See More ⇒
ixgt15n120b.pdf
IXGH 15N120B VCES = 1200 V HiPerFASTTM IGBT IXGT 15N120B IC25 = 30 A VCE(sat) = 3.2 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C30 A TO-247 AD (IXGH) IC110 TC = 110 C15 A ICM TC = 25 C, 1 ms 60 A ... See More ⇒
ixgh15n120b ixgt15n120b.pdf
IXGH 15N120B VCES = 1200 V HiPerFASTTM IGBT IXGT 15N120B IC25 = 30 A VCE(sat) = 3.2 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C30 A TO-247 AD (IXGH) IC110 TC = 110 C15 A ICM TC = 25 C, 1 ms 60 A ... See More ⇒
Specs: IXGR6N170A, IXGR72N60A3, IXGR72N60A3H1, IXGR72N60B3D1, IXGR72N60B3H1, IXGR72N60C3D1, IXGT10N170, IXGT10N170A, RJP30H2A, IXGT16N170, IXGT16N170A, IXGT16N170AH1, IXGT20N120, IXGT20N120B, IXGT20N140C3H1, IXGT22N170, IXGT24N170
Keywords - IXGT15N120B2D1 transistor spec
IXGT15N120B2D1 cross reference
IXGT15N120B2D1 equivalent finder
IXGT15N120B2D1 lookup
IXGT15N120B2D1 substitution
IXGT15N120B2D1 replacement
🌐 : EN ES РУ
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
Popular searches
2sc869 | tip29 transistor equivalent | 2n555 | 2sa564a | c815 transistor | ksa1381 equivalent | 2sa1306 | b817 transistor




