All IGBT. IXGT16N170AH1 Datasheet

 

IXGT16N170AH1 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXGT16N170AH1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 190 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 16 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 57 nS
   Coesⓘ - Output Capacitance, typ: 110 pF
   Qgⓘ - Total Gate Charge, typ: 83 nC
   Package: TO268

 IXGT16N170AH1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGT16N170AH1 Datasheet (PDF)

 ..1. Size:165K  ixys
ixgt16n170ah1.pdf

IXGT16N170AH1
IXGT16N170AH1

IXGH 16N170AVCES = 1700 VHigh VoltageIXGT 16N170AIC25 = 16 AIGBTIXGH 16N170AH1VCE(sat) = 5.0 VIXGT 16N170AH1tfi(typ) = 70 nsPreliminary Data SheetSymbol Test Conditions Maximum RatingsH1VCES TJ = 25C to 150C 1700 VTO-268 (IXGT)VCGR TJ = 25C to 150C; RGE = 1 M 1700 VVGES Continuous 20 VVGEM Transient 30 VGEIC25 TC = 25C16 AC (TAB)IC90 T

 3.1. Size:165K  ixys
ixgt16n170a.pdf

IXGT16N170AH1
IXGT16N170AH1

IXGH 16N170AVCES = 1700 VHigh VoltageIXGT 16N170AIC25 = 16 AIGBTIXGH 16N170AH1VCE(sat) = 5.0 VIXGT 16N170AH1tfi(typ) = 70 nsPreliminary Data SheetSymbol Test Conditions Maximum RatingsH1VCES TJ = 25C to 150C 1700 VTO-268 (IXGT)VCGR TJ = 25C to 150C; RGE = 1 M 1700 VVGES Continuous 20 VVGEM Transient 30 VGEIC25 TC = 25C16 AC (TAB)IC90 T

 4.1. Size:193K  ixys
ixgt16n170 ixgh16n170.pdf

IXGT16N170AH1
IXGT16N170AH1

IXGH 16N170 VCES = 1700 VHigh VoltageIXGT 16N170 IC25 = 32 AIGBTVCE(sat) = 3.5 VTO-268 (D3-Pak) (IXGT)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1700 VGVCGR TJ = 25C to 150C; RGE = 1 M 1700 VEC (TAB)VGES Continuous 20 VVGEM Transient 30 VTO-247 (IXGH)IC25 TC = 25C32 AIC90 TC = 90C16 AICM TC = 25C, 1 ms 80 AC (TAB)SSOA VG

 9.1. Size:60K  ixys
ixgt15n120bd1.pdf

IXGT16N170AH1
IXGT16N170AH1

Low VCE(sat) IGBT with Diode VDSS IC25 VCE(sat)High Speed IGBT with DiodeIXGH/IXGT 15N120BD11200 V 30 A 3.2 VIXGH/IXGT 15N120CD11200 V 30 A 3.8 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-247AD(IXGH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VGVGES Continuous 20 V CETABVGEM Transient 30 VIC25 TC = 25C30 ATO-2

 9.2. Size:562K  ixys
ixgt10n170a.pdf

IXGT16N170AH1
IXGT16N170AH1

IXGH 10N170AVCES = 1700 VHigh VoltageIXGT 10N170AIC25 = 10 AIGBTVCE(sat) = 6.0 Vtfi(typ) = 35 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C10 ATO-247 AD (IXGH)IC90 TC = 90C5 AICM

 9.3. Size:187K  ixys
ixgt10n170.pdf

IXGT16N170AH1
IXGT16N170AH1

VCES = 1700VHigh Voltage IXGH10N170IC90 = 10AIGBT IXGT10N170VCE(sat) 4.0VTO-247 (IXGH)Symbol Test Conditions Maximum RatingsGVCES TC = 25C to 150C 1700 VC C (TAB)EVCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VTO-268 (IXGT)VGEM Transient 30 VIC25 TC = 25C 20 AGEIC90 TC = 90C 10 AC (TAB)ICM TC = 25C,

 9.4. Size:66K  ixys
ixgt15n120b2d1.pdf

IXGT16N170AH1
IXGT16N170AH1

Advance Technical InformationVCES =1200 VIXGH15N120B2D1HiPerFASTTM IGBTIC25 = 30 AIXGT15N120B2D1VCE(sat) = 3.3 VOptimized for 10-20 KHz hardtfi(typ) = 137 nsswitching and up to 100 KHzresonant switchingSymbol Test Conditions Maximum RatingsTO-247ADVCES TJ = 25C to 150C 1200 V(IXGH)VCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGTABC

 9.5. Size:60K  ixys
ixgt15n120cd1.pdf

IXGT16N170AH1
IXGT16N170AH1

Low VCE(sat) IGBT with Diode VDSS IC25 VCE(sat)High Speed IGBT with DiodeIXGH/IXGT 15N120BD11200 V 30 A 3.2 VIXGH/IXGT 15N120CD11200 V 30 A 3.8 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-247AD(IXGH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VGVGES Continuous 20 V CETABVGEM Transient 30 VIC25 TC = 25C30 ATO-2

 9.6. Size:565K  ixys
ixgh10n170a ixgt10n170a.pdf

IXGT16N170AH1
IXGT16N170AH1

IXGH 10N170AVCES = 1700 VHigh VoltageIXGT 10N170AIC25 = 10 AIGBTVCE(sat) = 6.0 Vtfi(typ) = 35 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C10 ATO-247 AD (IXGH)IC90 TC = 90C5 AICM

 9.7. Size:170K  ixys
ixgt15n120b.pdf

IXGT16N170AH1
IXGT16N170AH1

IXGH 15N120B VCES = 1200 VHiPerFASTTM IGBTIXGT 15N120B IC25 = 30 AVCE(sat) = 3.2 Vtfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C30 ATO-247 AD (IXGH)IC110 TC = 110C15 AICM TC = 25C, 1 ms 60 A

 9.8. Size:529K  ixys
ixgh15n120b ixgt15n120b.pdf

IXGT16N170AH1
IXGT16N170AH1

IXGH 15N120B VCES = 1200 VHiPerFASTTM IGBTIXGT 15N120B IC25 = 30 AVCE(sat) = 3.2 Vtfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C30 ATO-247 AD (IXGH)IC110 TC = 110C15 AICM TC = 25C, 1 ms 60 A

 9.9. Size:52K  ixys
ixgt15n120c.pdf

IXGT16N170AH1
IXGT16N170AH1

IXGH 15N120C VCES = 1200 VIGBTIXGT 15N120C IC25 = 30 AVCE(sat) = 3.8 VLightspeed Seriestfi(typ) = 115 nsPreliminary dataSymbol Test Conditions Maximum RatingsTO-268 (IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VGVGES Continuous 20 VEVGEM Transient 30 V(TAB)IC25 TC = 25C30 AIC90 TC = 90C15 ATO-247 AD (IXGH)ICM TC =

Datasheet: IXGR72N60B3D1 , IXGR72N60B3H1 , IXGR72N60C3D1 , IXGT10N170 , IXGT10N170A , IXGT15N120B2D1 , IXGT16N170 , IXGT16N170A , IXGH60N60 , IXGT20N120 , IXGT20N120B , IXGT20N140C3H1 , IXGT22N170 , IXGT24N170 , IXGT24N170A , IXGT24N170AH1 , IXGT25N160 .

 

 
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