IXGT24N170A Specs and Replacement

Type Designator: IXGT24N170A

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 24 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.5 V @25℃

tr ⓘ - Rise Time, typ: 36 nS

Coesⓘ - Output Capacitance, typ: 198 pF

Package: TO268

 IXGT24N170A Substitution

- IGBTⓘ Cross-Reference Search

 

IXGT24N170A datasheet

 ..1. Size:519K  ixys
ixgh24n170a ixgt24n170a.pdf pdf_icon

IXGT24N170A

IXGH 24N170A VCES = 1700 V High Voltage IXGT 24N170A IC25 = 24 A IGBT VCE(sat) = 6.0 V tfi(typ) = 45 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C24 A TO-247 AD (IXGH) IC90 TC = 90 C16 A ICM... See More ⇒

 ..2. Size:222K  ixys
ixgt24n170a.pdf pdf_icon

IXGT24N170A

Preliminary Technical Information High Voltage VCES = 1700V IXGH24N170A IGBTs IXGT24N170A IC25 = 24A VCE(sat) 6.0V tfi(typ) = 40ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V G C (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V C E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C 24 A TO-268 (IX... See More ⇒

 0.1. Size:223K  ixys
ixgt24n170ah1.pdf pdf_icon

IXGT24N170A

Preliminary Technical Information High Voltage VCES = 1700V IXGH24N170AH1 IGBTs w/Diode IXGT24N170AH1 IC25 = 24A VCE(sat) 6.0V tfi(typ) = 40ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V G C (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V C E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C 24 A... See More ⇒

 4.1. Size:113K  ixys
ixgt24n170.pdf pdf_icon

IXGT24N170A

Advance Technical Information VCES = 1700V High Voltage IXGH24N170 IC25 = 50A IGBT IXGT24N170 VCE(sat) 3.3V tfi(typ) = 250ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G C C (TAB) VGES Continuous 20 V E VGEM Transient 30 V TO-268 (IXGT) IC25 TC = 25 C 50 A IC9... See More ⇒

Specs: IXGT16N170, IXGT16N170A, IXGT16N170AH1, IXGT20N120, IXGT20N120B, IXGT20N140C3H1, IXGT22N170, IXGT24N170, FGA60N65SMD, IXGT24N170AH1, IXGT25N160, IXGT25N250, IXGT28N120B, IXGT28N120BD1, IXGT28N60BD1, IXGT2N250, IXGT30N120B3D1

Keywords - IXGT24N170A transistor spec

 IXGT24N170A cross reference
 IXGT24N170A equivalent finder
 IXGT24N170A lookup
 IXGT24N170A substitution
 IXGT24N170A replacement