All IGBT. IXGT25N250 Datasheet

 

IXGT25N250 Datasheet and Replacement


   Type Designator: IXGT25N250
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.9(max) V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 233 nS
   Coesⓘ - Output Capacitance, typ: 75 pF
   Package: TO268
      - IGBT Cross-Reference

 

IXGT25N250 Datasheet (PDF)

 ..1. Size:173K  ixys
 ixgt25n250.pdf pdf_icon

IXGT25N250

Preliminary Technical InformationIXGH25N250 VCES = 2500 VHigh Voltage IGBTIXGT25N250 IC25 = 60 AFor Capacitor DischargeApplications IXGV25N250S VCE(sat) 2.9 VTO-247 (IXGH)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 2500 V CC (TAB)EVCGR TJ = 25C to 150C; RGE = 1 M 2500 VVGES Continuous 20 VTO-268 (IXGT)VGEM Transi

 0.1. Size:188K  ixys
 ixgt25n250hv.pdf pdf_icon

IXGT25N250

Advance Technical InformationVCES = 2500VHigh Voltage IGBT IXGT25N250HVIC110 = 25AFor Capacitor DischargeApplicationsVCE(sat) 2.9VTO-268GESymbol Test Conditions Maximum RatingsC (Tab)VCES TJ = 25C to 150C 2500 VG = Gate C = CollectorVCGR TJ = 25C to 150C, RGE = 1M 2500 VE = Emiiter Tab = CollectorVGES Continuous 20 VVGEM Tra

 7.1. Size:138K  ixys
 ixgt25n160.pdf pdf_icon

IXGT25N250

VCES = 1600 VIXGH 25N160High Voltage IGBTIC25 = 75 AIXGT 25N160VCE(sat)= 2.5 VFor Capacitor DischargeApplicationsPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TJ = 25C to 150C 1600 VVCGR TJ = 25C to 150C; RGE = 1 M 1600 VVGES Continuous 20 VGC C (TAB)VGEM Transient 30 VEIC25 TC = 25C 75 ATO-268 (IXGT)IC110

 7.2. Size:142K  ixys
 ixgh25n160 ixgt25n160.pdf pdf_icon

IXGT25N250

VCES = 1600 VIXGH 25N160High Voltage IGBTIC25 = 75 AIXGT 25N160VCE(sat)= 2.5 VFor Capacitor DischargeApplicationsPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TJ = 25C to 150C 1600 VVCGR TJ = 25C to 150C; RGE = 1 M 1600 VVGES Continuous 20 VGC C (TAB)VGEM Transient 30 VEIC25 TC = 25C 75 ATO-268 (IXGT)IC110

SHOW MORE

Datasheet: IXGT20N120 , IXGT20N120B , IXGT20N140C3H1 , IXGT22N170 , IXGT24N170 , IXGT24N170A , IXGT24N170AH1 , IXGT25N160 , GT30G124 , IXGT28N120B , IXGT28N120BD1 , IXGT28N60BD1 , IXGT2N250 , IXGT30N120B3D1 , IXGT30N60B , IXGT30N60B2 , IXGT30N60B2D1 .

History: 2MBI100UA-120 | SKM150GB12T4

Keywords - IXGT25N250 transistor datasheet

 IXGT25N250 cross reference
 IXGT25N250 equivalent finder
 IXGT25N250 lookup
 IXGT25N250 substitution
 IXGT25N250 replacement

 

 
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