All IGBT. IXGT32N90B2 Datasheet

 

IXGT32N90B2 IGBT. Datasheet pdf. Equivalent

Type Designator: IXGT32N90B2

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 900V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.7V

Maximum Collector Current |Ic|, A: 64A

Rise Time, nS: 165

Package: TO268

IXGT32N90B2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGT32N90B2 Datasheet (PDF)

1.1. ixgh32n90b2 ixgt32n90b2.pdf Size:202K _ixys

IXGT32N90B2
IXGT32N90B2

Advance Technical Information IXGH 32N90B2 VCES = 900 V HiPerFASTTM IGBT IXGT 32N90B2 IC25 = 64 A B2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 150 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25C to 150C 900 V VCGR TJ = 25C to 150C; RGE = 1 M? 900 V C (TAB) VGES Continuous 20 V G VGEM Transient 30 V C E IC25 TC = 25C (limited by leads) 64 A TO-26

1.2. ixgh32n90b2d1 ixgt32n90b2d1.pdf Size:219K _ixys

IXGT32N90B2
IXGT32N90B2

Advance Technical Information VCES = 900 V IXGH 32N90B2D1 HiPerFASTTM IGBT IC25 = 64 A IXGT 32N90B2D1 with Fast Diode VCE(sat) = 2.7 V tfi typ = 150 ns B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25C to 150C 900 V VCGR TJ = 25C to 150C; RGE = 1 MW 900 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E

1.3. ixgt32n90b2d1.pdf Size:217K _igbt_a

IXGT32N90B2
IXGT32N90B2

Advance Technical Information VCES = 900 V IXGH 32N90B2D1 HiPerFASTTM IGBT IC25 = 64 A IXGT 32N90B2D1 with Fast Diode VCE(sat) = 2.7 V tfi typ = 150 ns B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 900 V C (TAB) VGES Continuous ±20 V G C VGEM Transient

1.4. ixgt32n90b2.pdf Size:199K _igbt_a

IXGT32N90B2
IXGT32N90B2

Advance Technical Information IXGH 32N90B2 VCES = 900 V HiPerFASTTM IGBT IXGT 32N90B2 IC25 = 64 A B2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 150 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V C (TAB) VGES Continuous ±20 V G VGEM Transient ±30 V C E IC25 TC = 25°C (limited by leads)

Datasheet: IXGT30N60C2 , IXGT30N60C2D1 , IXGT30N60C3D1 , IXGT32N100A3 , IXGT32N120A3 , IXGT32N170 , IXGT32N170A , IXGT32N60C , SGW10N60A , IXGT32N90B2D1 , IXGT35N120B , IXGT35N120C , IXGT39N60B , IXGT39N60BD1 , IXGT40N120A2 , IXGT40N120B2D1 , IXGT40N60B .

 


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IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |